| PART |
Description |
Maker |
| MAXIM |
Improved Precision Micropower Shunt Voltage Reference
|
LM4041
|
| ADR370 ADR370BRT-R2 ADR370BRT-REEL7 ADR370ART-REEL |
Precision Low Power 2.048 V SOT-23 Voltage Reference
|
AD[Analog Devices]
|
| ADR390ART-RL ADR390ART-RL7 ADR395BUJZ-REEL7 ADR390 |
Precision Low Drift 2.048 V/2.5 V/4.096 V/ 5.0 V SOT-23 Reference with Shutdown
|
AD[Analog Devices]
|
| MSM512200L-80SJ MSM512200L-60SJ MSM512200L-60TS-K |
1,048,576-Word X 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字2位动态随机存储器：快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
|
| 1N3826AUR-1 1N3821AUR- CDLL3821A 1N3822AUR-1 CDLL3 |
Zener Diode（Leadless Package for Surface Mount齐纳二极管（无铅封装用于表贴
2.048-V Precision Micropower Shunt Voltage Reference, 1% accuracy 3-SOT-23 -40 to 125
|
Compensated Devices Incorporated
CDI-DIODE[Compensated Deuices Incorporated]
|
| LM4041DEM3-1.2-T LM4041AIX3-1.2T LM4041BEX3-1.2T L |
Improved Precision Micropower Shunt Voltage Reference 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.225 V, PDSO3
|
Maxim Integrated Products, Inc.
|
| THM401020SG-80 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 1,048,576 WORDSx40位动态RAM模块
1,048,576 WORDSx40 BIT DYNAMIC RAM MODULE
1/048/576 WORDSx40 BIT DYNAMIC RAM MODULE
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| ADR421 ADR421AR ADR421ARM-REEL7 ADR421AR-REEL7 ADR |
18V; ultraprecision low-noise, 2.048V / 2.500V / 3.00V / 5.00V XFET voltage reference. For bettery-powered instrumentation, portable medical instruments, precision data acquisition systems, high resolution converters
Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.048 V, PDSO8
Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO8
Toggle Switch; Circuitry:SPDT; Switch Operation:On-None-On; Contact Current Max:6A; Actuator Style:Bat; Switch Terminals:Through Hole; Current Rating:6A; Leaded Process Compatible:Yes; Mounting Type:PCB RoHS Compliant: Yes
10/100-ST SM PLUS
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80%
Ultraprecision Low Noise 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References
Ultraprecision Low Noise, 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References
Ultraprecision Low Noise/ 2.048 V/2.500 V/ 3.00 V/5.00 V XFET Voltage References
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80%
|
ANALOG DEVICES INC
Analog Devices, Inc.
AD[Analog Devices]
|
| MSM531622F |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit MASKROM(1M字6位或2M字位掩膜ROM 1,048,576字16位或2097152字8位MASKROM00万字× 16位或200万字× 8位掩膜ROM的字
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| HM514400ALT-7 HM514400ALZ-6 HM514400ALZ-8 HM514400 |
JT 42C 42#22 SKT WALL RECP
1,048,576-WORD x 4-BIT DYNAMIC RAM 1,048,576字4位动态随机存储器
LJT 37C 37#22D SKT RECP
|
Hitachi,Ltd.
|
| MR27V1602D |
1,048,576-Word x 16-Bit or 2,097,152-Word x 8-Bit One Time PROM(1M字6位或2M字位一次性可编程ROM 1,048,576字16位或2097152字8位一次性可编程00万字× 16位或200万字× 8位一次性可编程ROM的字
|
OKI SEMICONDUCTOR CO., LTD.
|
