| PART |
Description |
Maker |
| IDW10G120C5B |
Revolutionary semiconductor material - Silicon Carbide
|
Infineon Technologies A...
|
| KIA7812API KIA7805API KIA7807API KIA7806API KIA780 |
BIPOLAR LINEAR INTEGRATED CIRCUIT
SEMICONDUCTOR
SEMICONDUCTOR
|
KEC(Korea Electronics)
|
| GVT7264A16 7264A16S |
REVOLUTIONARY PINOUT 64K X 16
From old datasheet system
|
Galvantech
|
| XA3S200-4TQG144I XA3S400-4FGG456I XA3S200-4VQG100I |
XA3S200-4TQG144I FPGA, 480 CLBS, 200000 GATES, PQFP144
XA3S400-4FGG456I FPGA, 896 CLBS, 400000 GATES, PBGA456
AUTOMOTIVE FPGA, 480 CLBS, 200000 GATES, PQFP100
FPGA, 192 CLBS, 50000 GATES, PQFP100
Revolutionary 90-nanometer process technology
Revolutionary 90-nanometer process technology
|
Xilinx, Inc.
XILINX INC
|
| IS63LV1024-12T |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT
|
Integrated Silicon Solution, Inc
|
| SPP02N80C3 SPP02N80C308 |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| IPW50R250CP |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPA07N60C3 SPI07N60C3 SPP07N60C3 SPP07N60C307 |
New revolutionary high voltage technology Ultra low gate charge
|
Infineon Technologies AG
|
| SPN04N60S5 SPN04N60S505 |
New revolutionary high voltage technology Worldwide best RDS in SOT 223
|
Infineon Technologies AG
|
| K6R1004C1B K6R1004C1B-10 K6R1004C1B-12 K6R1004C1B- |
256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| SPP20N60CFD09 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
Cool MOS?/a> Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
| SPP24N60C3 SPP24N60C309 |
Cool MOS Power Transistor Feature New revolutionary high voltage technology
|
Infineon Technologies AG
|
