| PART |
Description |
Maker |
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-T |
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
| KM416C256DLJ-7 KM416V256DLJ-5 KM416C256DLJ-5 KM416 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability
|
Samsung Electronic
|
| K4F641612C-TC K4F661612C-TC |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM416C1200B KM416V1000B KM416V1200B KM416C1000B SA |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode 100万16的CMOS动态随机存储器的快速页面模
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4E641611D-TC50 K4E661611D-TC50 K4E641611D-TC60 K4 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
4M X 16 EDO DRAM, 50 ns, PDSO50
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| KM416C1000C |
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung semiconductor
|
| NN5118160 NN5118160A NN5118160AJ-50 NN5118160AJ-60 |
CMOS 1M x 16BIT DYNAMIC RAM 的CMOS 100万16动态随机存储器
Connector Housing; For Use With:APP PP75 Series Power Connectors; Leaded Process Compatible:No; No. of Contacts:1; Peak Reflow Compatible (260 C):No; Voltage Rating:75V RoHS Compliant: Yes
CB 8C 7#16 1#12 SKT RECP BOX
Fast Page Mode CMOS 1M x 16-Bit DRAM
|
Glenair, Inc.
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
Nippon Steel Semiconductor
|
| HM62256BLFP10 HM62256BLFP8 HM62256BLFP-4SLT |
32768-word x 8-bit high speed CMOS static RAM, 45ns
IC-SM-256K CMOS SRAM
|
Hitachi Semiconductor
|
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