| PART |
Description |
Maker |
| IRCZ34 |
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=60V, Rds(on)=0.050ohm, Id=30A)
|
International Rectifier
|
| IRFP064V |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A?
|
Power MOSFET
International Rectifier
|
| IRFZ44E IRFZ44EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)
|
IRF[International Rectifier]
|
| IRFP064 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=0.009ohm, Id=70*A)
|
IRF[International Rectifier]
Power MOSFET
|
| IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A)
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 5.1A
|
IRF[International Rectifier]
Samsung semiconductor
International Rectifier, Corp.
|
| IRFU9024 IRFR9024 IRFR9024TR IRFR9024TRL IRFR9024T |
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.28ohm，身份证\u003d- 8.8A
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR |
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
|
IRF[International Rectifier]
|
| STD12NE06 5369 |
N - CHANNEL 60V - 0.08 Ohm - 12A - IPAK/DPAK SINGLE FEATURE SIZE POWER MOSFET
From old datasheet system
N - CHANNEL 60V - 0.08ohm - 12A - IPAK/DPAK SINGLE FEATURE SIZE POWER MOSFET
N-CHANNEL POWER MOSFET
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRHNJ59303 IRHNJ59703 IRHNJ597034 IRHNJ593034 |
-60V 100kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package
-60V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT
|
IRF[International Rectifier]
|
| STS7NF60L |
N-CHANNEL 60V - 0.017 ohm - 7.5A SO-8 STripFET II POWER MOSFET
N-CHANNEL 60V - 0.017 ohm - 7.5A SO-8 STripFETII POWER MOSFET N沟道60V 0.017欧姆- 7.5A的SO - 8封装STripFET⑩二功率MOSFET
N-CHANNEL 60V - 0.017 ohm - 7.5A SO-8 STripFET⑩ II POWER MOSFET
N-CHANNEL 60V - 0.017 OHM - 7.5A SO-8 STRIPFET II POWER MOSFET
|
STMicroelectronics N.V.
ST Microelectronics
|
| IRHNB7064 IRHNA3064 IRHNA4064 IRHNA7064 IRHNA8064 |
60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
|
IRF[International Rectifier]
|
