PART |
Description |
Maker |
SFF80N10Z |
55 AMP (note 1) /100 Volts 12 mO N-Channel Trench Gate MOSFET 55 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Solid State Devices, Inc.
|
ZVP2110ASTZ UZVN3306ASTOB DIODESINC-ZVN3306ASMTA U |
230 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET TO-92 COMPATIBLE, E-LINE PACKAGE-3 270 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 100 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 260 mA, 240 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 90 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 450 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Diodes, Inc. ZETEX PLC DIODES INC
|
PSMN9R5-100PS |
N-channel 100 V 9.6 m standard level MOSFET in T0220 89 A, 100 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
FDP100N10 |
N-Channel PowerTrenchMOSFET 75 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB N-Channel PowerTrench㈢ MOSFET N-Channel PowerTrench? MOSFET
|
Fairchild Semiconductor, Corp.
|
BSP372 Q67000-S300 BSP372E-6327 BSP372E6327 |
1.7 A, 100 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated SIPMOS小信号晶体管(N通道增强模式逻辑层次额定雪崩 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
|
SIEMENS A G SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
OM6215SS OM6214SS OM6216SS OM6217SS |
30 A, 100 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 100V Dual N-Channel MOSFET in a S-6 package 400V Dual N-Channel MOSFET in a S-6 package 500V Dual N-Channel MOSFET in a S-6 package 200V Dual N-Channel MOSFET in a S-6 package
|
List of Unclassifed Manufacturers ETC International Rectifier
|
IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 60 V, 0.023 ohm, N-CHANNE 81 A, 60 V, 0.012 ohm, N-CHANNE 27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc. VISHAY INTERTECHNOLOGY INC
|
IRF9643-001PBF IRF9643-003PBF IRF9643-005PBF IRF96 |
9 A, 150 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET 8.7 A, 350 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC 1.75 A, 150 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET 1.75 A, 200 V, 3 ohm, P-CHANNEL, Si, POWER, MOSFET 27 A, 100 V, 0.099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC 3 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET 3 A, 150 V, 2.4 ohm, P-CHANNEL, Si, POWER, MOSFET 2.5 A, 100 V, 1.6 ohm, P-CHANNEL, Si, POWER, MOSFET 3.5 A, 150 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 11 A, 350 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC
|
VISHAY INTERTECHNOLOGY INC
|
PPFL3103E |
N Channel MOSFET; Package: SMD-.5; ID (A): 40; RDS(on) (Ohms): 0.02; PD (W): 100; BVDSS (V): 30; Rq: 1.25; 56 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
FDB3632NL |
100V N-Channel PowerTrench MOSFET 12 A, 100 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
FQI55N10 FQB55N10 |
100V N-Channel MOSFET 55 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
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