| PART |
Description |
Maker |
| OP750D OP750A OP750B OP750C |
NPN Pho totransistor with Base- Emitter Resistor
|
OPTEK[OPTEK Technologies]
|
| OP905 |
PIN Sili con Pho todiode
|
OPTEK[OPTEK Technologies]
|
| 2N5337A-220M |
SILICON NPN EPITAXIAL BASE IN TO220 METAL PACKAGE
NPN Epitaxial Base Transistor（TO220 Metal PackageNPN外延晶体管（TO220 金属封装，高可靠性）)
DIODE SCHOTTKY SINGLE 25V 150mW 0.32V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-523 3K/REEL
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| OP755B |
NPN Phototransistor with Base- Emitter Resisitor(NPN 光敏晶体管，内带一个基发射极电集电极电B>3.40mA)
|
Optek Technology
|
| OP755D OP755A OP755B OP755C |
NPN Photo transistor with Base-Emitter Resistor
|
OPTEK[OPTEK Technologies]
|
| BD201 BD202 BD204 BD203 |
EPITAXIAL BASE SILICON NPN AND PNP VERSAWATT TRANSISTORS
|
GE Security, Inc.
GE[General Semiconductor]
|
| DDC144TU-7 |
DUAL NPN TRANSISTORS WITH 47K OHM BASE RESISTOR
|
Diodes Inc.
|
| NTE99 |
Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode
|
NTE[NTE Electronics]
|
| 2021-25 |
25 W, 24 V, 2000-2130 MHz common base transistor
25 Watts, 24 Volts, Class C Microwave 2000 - 2130 MHz
BJT
2000-2400 MHz, Class C, Common Base; fO (MHz): 2100; P(out) (W): 25; P(in) (W): 5; Gain (dB): 7.5; Vcc (V): 24; Case Style: 55AW-1 S BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
Microsemi, Corp.
|
| MJ10006 MJ10007 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR WITH BASE-EMITTER SPEEDUP DIODE
|
Boca Semiconductor Corp...
BOCA[Boca Semiconductor Corporation]
|
| MJ10023-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
ON Semiconductor
|
