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IDW30G120C5B - Revolutionary semiconductor material - Silicon Carbide

IDW30G120C5B_8299046.PDF Datasheet


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IDW30G120C5B Revolutionary semiconductor material - Silicon Carbide
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AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025 3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
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High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125
Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85
Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125
Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85
Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85
5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
Alliance Semiconductor ...
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XA3S200-4TQG144I XA3S400-4FGG456I XA3S200-4VQG100I XA3S200-4TQG144I FPGA, 480 CLBS, 200000 GATES, PQFP144
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IDW30G120C5B Transistor IDW30G120C5B Filter IDW30G120C5B Control IDW30G120C5B Output IDW30G120C5B device
 

 

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