PART |
Description |
Maker |
RFH35N10 RFH35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers ETC[ETC]
|
SSM3K05FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHALLEL MOS TYPE
|
Toshiba Semiconductor
|
STD4525NL STU4525NL |
N-Channel Enhancement Mode Field Effect Transistor Dual N-Channel E nhancement Mode Field Effect Transistor
|
SamHop Microelectronics
|
HAL508UA-A HAL523SF-A HAL523SF-K HAL516SF-A HAL516 |
MAGNETIC FIELD SENSOR-HALL EFFECT, -2.3-2.3mT, 0-20mA, RECTANGULAR, THROUGH HOLE MOUNT MAGNETIC FIELD SENSOR-HALL EFFECT, 20.7-13.5mT, 0-20mA, RECTANGULAR, THROUGH HOLE MOUNT PLASTIC, TO-92UA-1, 3 PIN Hall-Effect Sensor Family
|
Micronas Semiconductor Holding AG
|
FERD20H100SFP FERD20H100STS FERD20H100SB-TR |
100 V field-effect rectifier diode
|
STMicroelectronics
|
AH266K-PG-B-A AH266K-PG-B-B AH266K-PL-B-A AH266K-P |
HIGH VOLTAGE HALL EFFECT LATCH MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, SIP-4 MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, SIP-4
|
Diodes Incorporated Diodes, Inc.
|
SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
SSM5N05FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
TOSHIBA[Toshiba Semiconductor]
|
ATS137 ATS137-P ATS137-PG-7-A ATS137-PG-7-B ATS137 |
SINGLE HALL EFFECT SWITCH MAGNETIC FIELD SENSOR-HALL EFFECT, 1-10mT, 700mV, RECTANGULAR, THROUGH HOLE MOUNT SINGLE HALL EFFECT SWITCH 单个霍尔效应开
|
Diodes, Inc. 磁阻传感 Diodes Inc. DIODES[Diodes Incorporated]
|
NDH8320C |
Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道:漏电流3A, 漏源电压20V,导通电.06Ω;P沟道:漏电流-2A, 漏源电压-20V,导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET Dual N & P-Channel Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|