PART |
Description |
Maker |
FCA16N60N |
N-Channel SupreMOSMOSFET 600V, 16A, 199m
|
Fairchild Semiconductor
|
FCH22N60N |
N-Channel SupreMOSMOSFET 600V, 22A, 165m Ultra Low Gate Charge (Typ. Qg = 45 nC), Low Effective Output Capacitance (Typ. Coss.eff = 196.4 pF)
|
Fairchild Semiconductor
|
STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics STMicroelectronics 意法半导
|
FQU1N60C FQD1N60C FQD1N60CTF FQD1N60CTM FQU1N60CTU |
600V N-Channel Advance QFET C-Series 600V N-Channel MOSFET From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
STB4NC60 8256 STB4NC60T4 |
INTEGRATED EC000 MPU N沟道600V 1.8ohm - 4.2A D2PAK封装MOSFET的第二PowerMesh N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?II MOSFET N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET From old datasheet system N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
|
STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
FQI12N60C FQB12N60C FQB12N60CTM |
600V N-Channel MOSFET 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
|
http:// FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
FQP6N60C FQPF6N60C |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
FQA10N60C |
600V N-Channel MOSFET 600V N-Channel Advance Q-FET C-Series
|
FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD[Fairchild Semiconductor]
|
FQI10N60C FQB10N60C FQB10N60CTM FQI10N60CTU |
600V N-Channel MOSFET 600V N-Channel Advance Q-FET C-Series
|
http:// FAIRCHILD[Fairchild Semiconductor]
|
SSW2N60B 2N60B SSI2N60B SSW2N60BTM |
600V N-Channel B-FET / Substitute of SSW2N60A 600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
IRF[International Rectifier] International Rectifier, Corp.
|