| PART |
Description |
Maker |
| BLM7G1822S-40PB BLM7G1822S-40PBG |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| BLM8G0710S-45AB-15 |
LDMOS 2-stage power MMIC
|
NXP Semiconductors
|
| CGY93 |
GSM 2 stage Power Amplifier MMIC
GaAs MMIC
From old datasheet system
|
INFINEON[Infineon Technologies AG]
|
| PTMC210204MD |
Wideband LDMOS Two-stage Integrated Power Amplifi er 20 W, 28 V, 1805 ?2200 MHz
|
Infineon Technologies A...
|
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| CGY181 |
PCN/PCS 2 stage Power Amplifier MMIC
|
Infineon
|
| Q68000-A8370 CGY50 CGY50E6327 |
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 Ω gain block)
From old datasheet system
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 ヘ gain block)
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 gain block)
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 gain block)
GaAs MMIC (Single-stage monolithic microwave IC MMICamplifier Cascadable 50 gain block)
Broadband MMIC Amplifier
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Infineon
|
| BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET
Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| BLF6G22-45 |
Power LDMOS transistor
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
| Q68000-A8884 CGY92 |
GaAs MMIC (Power amplifier for GSM or AMPS application Fully integrated 2 stage amplifier)
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
| 0809LD30P |
Compant High-Insulation Power Relay, Polarized, 10A
30 Watt / 28V / 1 Ghz LDMOS FET
30 WATT 28V 1 GHz LDMOS FET
30 WATT, 28V, 1 GHz LDMOS FET
|
Electronic Theatre Controls, Inc.
GHZ Technology
ETC[ETC]
List of Unclassifed Manufacturers
|
