| PART |
Description |
Maker |
| AN4242 |
New generation of 650 V SiC diodes
|
STMicroelectronics
|
| STF10NM65N STD10NM65N STP10NM65N STU10NM65N |
N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh?/a> Power MOSFET
N-channel 650 V - 0.43 Ω - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh Power MOSFET
N-channel 650 V - 0.43 ヘ - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| IDV02S60C |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| IDY15S120 |
2nd Generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
| IDD10SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
| IDC05S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies
|
| IDV03S60C |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| IDT04S60C |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| IDT10S60C08 |
2nd Generation thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
| IDH05SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
|
Infineon Technologies AG
|
| IDT06BS60C IDT06S60C |
2nd generation thinQ! SiC Schottky Diode
|
Infineon Technologies AG
|
| IDC06S60C |
2nd generation thinQ! SiC Schottky Diode 第二thinQ！碳化硅肖特基二极管
|
Infineon Technologies AG
|
