| PART |
Description |
Maker |
| IS63LV1024 IS63LV1024L-12T IS63LV1024L-8TI IS63LV1 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 8 ns, PDSO32
TRANS PNP W/RES 50HFE NS-B1 128K X 8 STANDARD SRAM, 12 ns, PBGA36
TRANS PNP W/RES 30HFE NS-B1 128K X 8 STANDARD SRAM, 10 ns, PDSO32
TRANS PNP W/RES 60HFE NS-B1
CAP CERAMIC 330PF 50V NP0 0805
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| SL1222101-A SL1222101-B |
TRANS,WALL,24VDC/400mA,F2, 2.1mm x 5.5mm,UL 50/cs 电路保护热敏电阻
TRANS,WALL,24VDC/500mA,F1 2.1mmX5.5mm,UL
TRANS,WALL,18VDC/1A,F2,2.5X5.5 ,2 PRNG AC,LIN NON-REG
|
Ametherm, Inc.
|
| PWB PWB-5000 PWB-5001 PWB-5005 |
TRANS,WALL,9VDC/300mA,F1, 2.5X5.5mm,UL/CUL
TRANS,WALL,9VDC/350mA,F2 2.1mm x 5.5 mm,UL/CUL
TRANS,WALL,12VDC/200MA,F2 2.1mm X 5.5mm,RT. ANGLE
TRANS,WALL,12VDC/200mA,LT GRAY F2,2.5mmX5.5mm,RANGL,UL/CSA 1-OUTPUT 5 W AC-DC REG PWR SUPPLY MODULE
|
Astrodyne, Inc.
|
| V53C104P-70 V53C104P-70L V53C104P-12 V53C104P-12L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
TRANS NPN DARL 100V 8A TO022FP
|
Mosel Vitelic, Corp.
|
| 2N334 2N335 2N334A 2N335/1299 |
Trans GP BJT NPN 3-Pin TO-5
Trans GP BJT PNP 45V 0.03A 6-Pin LCC-2
Trans GP BJT PNP 40V 0.2A 6-Pin LCC-2
|
New Jersey Semiconductor
|
| DS1000 DS1000-75 DS1000-250 DS1000-60 DS1000-100 D |
TRANS SS NPN 45V 100MA SOT-523 5抽头硅延迟线
TRANS SS NPN 50V 100MA SOT23 5抽头硅延迟线
RECTIFIER BRIDGE 1A 200V DB-1 5抽头硅延迟线
RECTIFIER BRIDGE 1A 100V DB-1
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:41; Connector Shell Size:22; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
RECTIFIER BRIDGE 1A 50V DB-1
TRANSISTOR PNP 45V 100MA SOT563
TRANS SS NPN 50V SOT-323
RECTIFIER BRIDGE 1A 400V DB-1
5-Tap Silicon Delay Line
|
Maxim Integrated Products, Inc.
Unisem Group
DALLAS[Dallas Semiconducotr]
DALLAS[Dallas Semiconductor]
MAXIM - Dallas Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 2N5038 JAN2N5039 JANTXV2N5039 2N5039 JAN2N5038 JAN |
NPN HIGH POWER SILICON TRANSISTOR 20 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-204AA
NPN HIGH POWER SILICON TRANSISTOR 2 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3
From old datasheet system
(JAN2N5038 / JAN2N5039) NPN HIGH POWER SILICON TRANSISTOR
NPN Transistor
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 50N06-TA3-T 50N06-TF3-T 2SA102005 2SA1797-X-AA3-R |
SILICON PNP EPITAXIAL TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SILICON PNP EPITAXIAL TRANSISTOR 进步党硅外延晶体
REVERSIBLE MOTOR DRIVER
NPN EPITAXIAL PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG APPLICATIONS
HIGH CURRENT SWITCHING APPLICATIONS
HIGH VOLTAGE NPN TRANSISTOR
HIGH VOLTAGE AND HIGH RELIABILITY TRANSISTOR
NPN SILICON TRANSISTOR
HIGH FREQUENCY AMPLIFIER TRANSISTOR, RF SWITCHING (6V, 50mA)
HIGH-FREQUENCY AMPLIFIER TRANSISTOR
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
SILICON PNP TRANSISTOR
LOW FREQUENCY PNP TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER TRANSISTOR
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR
PNP EPITAXIAL PLANAR TRANSISTOR
50 Amps, 60 Volts N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
??『绉???′唤??????
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| 2SK1938 2SK1938-01R |
TRANS PREBIASED PNP 200MW SOT23
Power MOSFET
From old datasheet system
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
|
