PART |
Description |
Maker |
STW9B12G |
Thermally Enhanced Package Design
|
Seoul Semiconductor
|
STW9C2SA |
Thermally Enhanced Package Design
|
Seoul Semiconductor
|
ACS709V |
High Bandwidth, Fast Fault Response Current Sensor IC In Thermally Enhanced Package High Bandwidth, Fast Fault Response Current Sensor IC In Thermally Enhanced Package
|
Allegro MicroSystems
|
PTFA041501GL PTFA041501HL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Infineon Technologies AG
|
PXAC192908FV PXAC192908FV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PXFC192207FH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFA142401EL |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies
|
PXFC191507FC |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PTFB090901FA PTFB090901EA |
Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz
|
Infineon Technologies AG
|
PTFA241301E PTFA241301F PTFA241301FV1 |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 ?2480 MHz
|
Infineon Technologies AG Infineon Technologies A...
|
PTFA212001E PTFA212001F |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|