Part Number Hot Search : 
5CD012 53007 MT351 KIA555 MAX9216 N120B SD1423 T24C128
Product Description
Full Text Search

STW9B12G - Thermally Enhanced Package Design

STW9B12G_8295370.PDF Datasheet

 
Part No. STW9B12G
Description Thermally Enhanced Package Design

File Size 601.96K  /  24 Page  

Maker


Seoul Semiconductor



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: STW9NA80
Maker: ST
Pack: TO-247
Stock: Reserved
Unit price for :
    50: $1.29
  100: $1.23
1000: $1.16

Email: oulindz@gmail.com

Contact us

Homepage http://www.seoulsemicon.com/
Download [ ]
[ STW9B12G Datasheet PDF Downlaod from Datasheet.HK ]
[STW9B12G Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for STW9B12G ]

[ Price & Availability of STW9B12G by FindChips.com ]

 Full text search : Thermally Enhanced Package Design


 Related Part Number
PART Description Maker
PTFA211801E PTFA211801E-15 Thermally-Enhanced High Power RF LDMOS FET
Infineon Technologies A...
PTFA181001GL Thermally-Enhanced High Power RF LDMOS FET
Infineon Technologies
PTFB210801FAV1R0XTMA1 PTFB210801FAV1R250 PTFB21080 Thermally-Enhanced High Power RF LDMOS FET
Infineon Technologies A...
PTAB182002FCV1R0 Thermally-Enhanced High Power RF LDMOS FET
Infineon Technologies A...
PTFA180701E PTFA180701EV4R0 PTFA180701EF PTFA18070 Thermally-Enhanced High Power RF LDMOS FETs
Infineon Technologies A...
PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET
Infineon Technologies A...
PTVA047002EV-15 Thermally-Enhanced High Power RF LDMOS FET
Infineon Technologies A...
PTFA070601E PTFA070601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 725 鈥?770 MHz
Infineon Technologies AG
PTFB090901FA PTFB090901EA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 . 960 MHz
Infineon Technologies AG
PTFA240451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz
Infineon Technologies AG
PTFA212002E Thermally-Enhanced High Power RF LDMOS FET 200 W, 2110-2170 MHz
Infineon Technologies AG
PTFA212001E PTFA212001F Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 ?2170 MHz
Infineon Technologies AG
 
 Related keyword From Full Text Search System
STW9B12G differential STW9B12G positive STW9B12G amp STW9B12G advantech pdf STW9B12G server
STW9B12G filetype:pdf STW9B12G linear STW9B12G power suppiy STW9B12G mos STW9B12G frequency
 

 

Price & Availability of STW9B12G

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.68325901031494