PART |
Description |
Maker |
STL42N65M5 |
N-channel 650 V, 0.070 Ohm typ., 22.5 A MDmesh(TM) V Power MOSFET in a PowerFLAT(TM) 8x8 HV package
|
ST Microelectronics
|
STB42N65M5 STF42N65M5 STI42N65M5 STP42N65M5 CD0022 |
High dv/dt capability N-channel 650 V, 0.070 Ω, 33 A MDmesh?V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247 N-channel 650 V, 0.070 Ω, 33 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP, D2PAK and TO-247 N-channel 650 V, 0.070 ohm, 33 A MDmesh V Power MOSFET N-channel 650 V, 0.070 Ohm, 33 A MDmesh(TM) V Power MOSFET in I2PAK
|
STMicroelectronics ST Microelectronics
|
STW88N65M5 STWA88N65M5 |
N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 package N-channel 650 V, 0.024 Ohm typ., 84 A MDmesh M5 Power MOSFET in TO-247 long leads package
|
ST Microelectronics
|
STP7N65M2 |
N-channel 650 V, 0.96 Ohm typ., 5 A MDmesh M2 Power MOSFET in a TO-220 package
|
ST Microelectronics
|
STL45N65M5 |
N-channel 650 V, 0.075 Ohm typ., 22.5 A MDmesh(TM) V Power MOSFET in a PowerFLAT 8x8 HV package
|
ST Microelectronics
|
S8119 |
MOSFET, Switching; VDSS (V): 60; ID (A): 1.5; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.173]; RDS (ON) typ. (ohm) @2.5V: 0.207; Ciss (pF) typ: 200; toff (µs) typ: 0.035; Package: MPAK 图片集成电路光开
|
Hamamatsu Photonics K.K.
|
STP10N65K3 STF10N65K3 STFI10N65K3 |
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages
|
STMicroelectronics
|
S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
STFW69N65M5 STW69N65M5 |
N-channel 650 V, 0.037 Ohm, 58 A MDmesh(TM) V Power MOSFET in TO-3PF package N-channel 650 V, 0.037 Ω typ., 58 A MDmesh?V Power MOSFET in TO-3PF and TO-247 packages N-channel 650 V, 0.037 Ω typ., 58 A MDmesh V Power MOSFET in TO-3PF and TO-247 packages
|
ST Microelectronics STMicroelectronics
|
STB10N65K3 STF10N65K3 STP10N65K3 |
Very low intrinsic capacitances N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in D2PAK package
|
STMicroelectronics ST Microelectronics
|
HUF75309D3S HUF75309D3 HUF75309P3 |
19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs 19 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 19A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFETs 19 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA 19A/ 55V/ 0.070 Ohm/ N-Channel UltraFET Power MOSFETs
|
Intersil, Corp. Intersil Corporation Fairchild Semiconductor
|
S5573 |
MOSFET, Switching; VDSS (V): 600; ID (A): 30; Pch : 200; RDS (ON) typ. (ohm) @10V: 0.2; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
|
Hamamatsu Photonics
|
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