| PART |
Description |
Maker |
| MAX6720 MAX6720UTD-T MAX6729 MAX6717 MAX6722UTD-T |
Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.313 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Dual/Triple Ultra-Low-Voltage SOT23 μP Supervisory Circuits
Dual/Triple Ultra-Low-Voltage SOT23 P Supervisory Circuits
Replaced by TPL9201 : Microcontroller Power Supply and Low-Side Driver 20-PDIP -40 to 125
Dual/Triple Ultra-Low-Voltage SOT23 レP Supervisory Circuits 三路、超低电压、SOT23封装、微处理器监控电
8-Bit Shift Register 16-PDIP -40 to 125 三路、超低电压、SOT23封装、微处理器监控电
Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.625 V,Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.388 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 3.075 V, Vcc2: 2.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.575 V, Vcc2: 1.050 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1: 1.665 V, Vcc2: 0.883 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
Vcc1 4.625 V,Vcc2 3.075 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit
|
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
Maxim Integrated Produc...
MAXIM - Dallas Semiconductor
|
| 6N140A-100 HCPL-6730 HCPL-177K-B600 HCPL-5731 HCPL |
5962-9800201KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-573K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5731 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001PC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001PA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KZC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001XA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
6N140A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
6N140A/883B · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401ZC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401XA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401FC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401EA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401EC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978504K2A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KPC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KPA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-89785022A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501ZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6750 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5730 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5700 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-570K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6731 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-673K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6751 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6730 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5701 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-675K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K-300 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K-600 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501PC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501PA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-570K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
6N140A-600 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KPC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KPA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KXA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KFC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KEC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KEA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-573K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
(HCPL-xxxx) Hermetically Sealed / Low IF / Wide VCC / High Gain Optocouplers
3V Voltage Monitoring, Low-Cost, µP Supervisory Circuits
3.5MM M-M STREO AUDIO 30CBLE; 24AWG, BLCK MOLDED
3.5MM M-M STREO AUDIO 25CBLE; 24AWG, BLCK MOLDED
LOGIC-GATE-OUTPUT OPTOCOUPLER 逻辑门输出光耦合
Hermetically Sealed. Low IF. Wide Vcc. High Gain Optocouplers 密封。低中频。宽的VCC。高增益光电耦合
Hermetically Sealed, Low I F ,Wide V CC , High Gain Optocouplers(密封，小电流，宽电压，高增益光耦合 密封，低中频，宽V CC的，高增益光耦合器（密封，小电流，宽电压，高增益光耦合器）
NPN-OUTPUT DC-INPUT OPTOCOUPLER npn型输出DC -输入光耦合
DARLINGTON-NPN-OUTPUT DC-INPUT OPTOCOUPLER 达林 npn型输出DC -输入光耦合
Hermetically Sealed, Low IF, Wide VCC, High Gain Optocouplers 密封，中频，宽虚拟通道连接，高增益低光
3V Voltage Monitoring, Low-Cost, µP Supervisory Circuits 密封。低中频。宽的VCC。高增益光电耦合
Receptacle With A Standard Tail 达林 npn型输出DC -输入光耦合
1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 0.1 Mbps
4 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 0.1 Mbps
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Agilent Technologies, Inc.
Avago Technologies, Ltd.
Analog Devices, Inc.
BI Technologies, Corp.
Coilcraft, Inc.
Harwin PLC
AGILENT TECHNOLOGIES INC
|
| MAX4832 MAX4833 MAX4832EUT18D1 MAX4832ETT18D1 MAX4 |
3.0 V, reset timeout: 1800 ms, 100 mA LDO regulator with current-limiting switch
3.0 V, reset timeout: 3.75 ms, 100 mA LDO regulator with current-limiting switch
2.8 V, reset timeout: 225 ms, 100 mA LDO regulator with current-limiting switch
2.8 V, reset timeout: 3.75 ms, 100 mA LDO regulator with current-limiting switch
2.5 V, reset timeout: 225 ms, 100 mA LDO regulator with current-limiting switch
1.8 V, reset timeout: 225 ms, 100 mA LDO regulator with current-limiting switch
1.8 V, reset timeout: 3.75 ms, 100 mA LDO regulator with current-limiting switch
2.8 V FIXED POSITIVE LDO REGULATOR, 0.13 V DROPOUT, DSO6
From old datasheet system
100mA LDO Linear Regulators with Current-Limiting Switch
3.3 V, 100 mA LDO regulator with current-limiting switch
3.3 V, reset timeout: 225 ms, 100 mA LDO regulator with current-limiting switch
3.3 V, reset timeout: 30 ms, 100 mA LDO regulator with current-limiting switch
3.3 V, reset timeout: 3.75 ms, 100 mA LDO regulator with current-limiting switch
3.3 V, reset timeout: 1800 ms, 100 mA LDO regulator with current-limiting switch
1.8 V, reset timeout: 30 ms, 100 mA LDO regulator with current-limiting switch
2.5 V, reset timeout: 30 ms, 100 mA LDO regulator with current-limiting switch
2.5 V, reset timeout: 1800 ms, 100 mA LDO regulator with current-limiting switch
2.8 V, reset timeout: 30 ms, 100 mA LDO regulator with current-limiting switch
2.8 V, reset timeout: 1800 ms, 100 mA LDO regulator with current-limiting switch
3.0 V, reset timeout: 30 ms, 100 mA LDO regulator with current-limiting switch
3.0 V, 100 mA LDO regulator with current-limiting switch
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Maxim Integrated Produc...
MAXIM INTEGRATED PRODUCTS INC
MAXIM[Maxim Integrated Products]
MAXIM - Dallas Semiconductor
|
| MAX6750KA30-T MAX6750KA27-T MAX6746KA48-T MAX6753K |
µP Reset Circuits with Capacitor-Adjustable Reset/Watchdog Timeout Delay 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
μP Reset Circuits with Capacitor-Adjustable Reset/Watchdog Timeout Delay
muP Reset Circuits with Capacitor-Adjustable Reset/Watchdog Timeout Delay
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Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
Maxim Integrated Produc...
|
| A1405 SA0805 A0805 A1410 05T-200NS-B A0805-750NS-B |
ACTIVE (DIGITAL) DELAY LINES
ACTIVE DELAY LINE, PDIP8
ACTIVE DELAY LINE, PSIP8
ACTIVE DELAY LINE, PDIP14
ACTIVE DELAY LINE, CDIP14
|
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
RCD COMPONENTS INC
|
| M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M3823 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
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Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| MAX4837 MAX4836 MAX4836-MAX4837 MAX4837EUT MAX4837 |
3.3 V, reset timeout: 1800 ms, 500 mA LDO linear regulator with current-limiting switch
3.3 V, reset timeout: 225 ms, 500 mA LDO linear regulator with current-limiting switch
3.3 V, reset timeout: 30 ms, 500 mA LDO linear regulator with current-limiting switch
3.3 V, reset timeout: 3.75 ms, 500 mA LDO linear regulator with current-limiting switch
3.3 V, 500 mA LDO linear regulator with current-limiting switch
500mA LDO Linear Regulators with Current-Limiting Switch
From old datasheet system
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MAXIM - Dallas Semiconductor
Maxim Integrated Products
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
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Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| EP9810-470 EP9810-470-RC EP9810-100 EP9810-100-RC |
ACTIVE DELAY LINE, TRUE OUTPUT, DIP8
14 Pin DIL 5 Tap TTL Compatible Active Delay Lines
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PCA ELECTRONICS INC.
|
| EPA280-90 EPA280-250 EPA280-5 EPA28010 EPA280-150 |
SMD 14-Pin Triple TTL Compatible Active Delay Lines
ACTIVE DELAY LINE, TRUE OUTPUT, DSO8
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PCA ELECTRONICS INC.
|
| EP9604-32-RC EP9604-44-RC EP9604-440 EP9604-440-RC |
ACTIVE DELAY LINE, TRUE OUTPUT, PDIP8
5 Tap High Speed CMOS (HCT) Compatible Active Delay Lines
|
PCA ELECTRONICS INC.
|
| EP9604G-450 EP9604G-450-RC EP9604G-550-RC EP9604G- |
ACTIVE DELAY LINE, TRUE OUTPUT, DSO8
5 Tap High Speed CMOS (HCT) Compatible Active Delay Lines
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PCA ELECTRONICS INC.
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