| PART |
Description |
Maker |
| SPW15N60CFD |
Intrinsic fast-recovery body diode
|
Infineon Technologies AG
|
| IXTT6N150 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| SPI15N60CFD |
CoolMOSTM Power Transistor Intrinsic fast-recovery body diode
|
Infineon Technologies AG
|
| IXTA3N150HV |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTP05N100P IXTA05N100P |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| SPA07N60CFD |
CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode
|
Infineon Technologies AG
|
| IXTH02N250 IXTA02N250 IXTV02N250S |
High Voltage Power MOSFETs
N-Channel Enhancement Mode Fast Intrinsic Diode
|
IXYS Corporation
|
| BAT54SDW BAT54CDW BAT54ADW BAT54BRW-TP BAT54SDW-TP |
200mWatt, 30Volt Schottky Barrier Diode
DIODE SCHOTTKY 200MW 30V SOT363 0.2 A, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
|
| IXTQ22N50P IXTH22N50P IXTV22N50P IXTV22N50PS |
MOSFET N-CH 500V 22A TO-3P 22 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS, Corp.
IXYS Corporation
|
| NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6
Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
| IRF7526D1 IRF7526D1TR |
Co-packaged HEXFETò Power MOSFET and Schottky Diode
FETKYMOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V) FETKY⑩MOSFET
FETKY MOSFET & Schottky Diode(Vdss=-30V Rds(on)=0.20ohm Schottky Vf=0.39V)
FETKY MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
FETKY⑩ MOSFET & Schottky Diode(Vdss=-30V, Rds(on)=0.20ohm, Schottky Vf=0.39V)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
