| PART |
Description |
Maker |
| ZXTN25020CFHTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V, SOT23, NPN medium power transistor
|
Diodes Incorporated
|
| ZXTN25020BFHTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V, SOT23, NPN medium power transistor
|
Diodes Incorporated
|
| ZXTN19020DFF ZXTN19020DFFTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V, SOT23F, NPN high gain power transistor
|
Diodes Incorporated
|
| ZXTN19020CFF ZXTN19020CFFTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V, SOT23F, NPN high gain power transistor
|
Diodes Incorporated
|
| 2SA1708S-AN EN3094B 2SC4488T-AN 2SC4488S-AN |
Bipolar Transistor
Bipolar Transistor Adoption of FBET, MBIT processes
Bipolar Transistor ?0V, ?A, Low VCE(sat) PNP Single PCP
|
ON Semiconductor
|
| ZXT11N20DFTA ZXT11N20DFTC ZXT11N20DF |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
20V NPN SILICON LOW SATURATION TRANSISTOR
NPN Low Sat Transistor
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| CSB1436R CSB1436P CSB1436 |
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 390 hFE.
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 晶体管|晶体管|进步党| 20V的五（巴西）总裁| 5A条一（c）|26
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 180 hFE.
|
Electronic Theatre Controls, Inc.
Continental Device India Limited
|
| TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm
Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm
Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm
Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm
Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC
Analog IC 模拟IC
|
Bourns, Inc.
|
| CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CTN368 CTN369 |
1.000W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 1.000A Ic, 50 - hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 20V Vceo, 0.500A Ic, 50 - hFE
|
Continental Device India Limited
|
| CPH6223-TL-E |
Bipolar Transistor
Bipolar Transistor (.)50V, (.)3A, Low VCE(sat), (PNP)NPN Single CPH6
|
ON Semiconductor
|
