| PART |
Description |
Maker |
| F2202S |
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 1.6A I(D)
FET, Enhancement, ID 1.6 A
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER
|
Polyfet RF Devices
List of Unclassifed Manufacturers
|
| IRF540_D ON0285 IRF540/D IRF540-D IRF540 |
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100V7A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管（N沟道增强型硅门）)
From old datasheet system
TMOS POWER FET 27 AMPERES
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| CTLM8110-M832D |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER
|
Central Semiconductor Corp
|
| CMRDM357510 |
SURFACE MOUNT N-CHANNEL AND P-CHANNEL ENHANCEMENT-MODE COMPLEMENTARY SILICON MOSFETS
|
http://
|
| IRF530_D ON0283 IRF530-D IRF530/D |
100V4A TMOS Power Field Effect Transistor （N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管（N沟道增强型硅门）)
TMOS POWER FET 14 AMPERES
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
Motorola, Inc.
ON Semiconductor
|
| XN01872 XN1872 |
Silicon n-channel enhancement MOSFET
|
PANASONIC[Panasonic Semiconductor]
|
| CMPDM8120 |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
Central Semiconductor Corp
|
| CMUDM8004 |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
Central Semiconductor Corp
|
| CWDM3011P CWDM3011P-15 |
SURFACE MOUNT SILICON P-CHANNEL ENHANCEMENT-MODE MOSFET
|
Central Semiconductor C...
|
| 2SK1840 |
N-Channel Enhancement Silicon MOSFET Analog Switch Applications
|
Sanyo
|
| CMLDM8120 CMLDM8120G |
SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET
|
Central Semiconductor Corp
|
