PART |
Description |
Maker |
MW5IC2030MBR1 MW5IC2030GMBR1 |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER 1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] Freescale (Motorola)
|
MAMDES0010 |
E-Series I/Q Modulator 1930 - 1990 MHz
|
MACOM[Tyco Electronics]
|
AGR19125E AGR19125EF AGR19125EU |
125 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
1920AB12 |
12 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
SM1920-52LD |
1930 - 1990 MHz 160 Watt Power Amplifier
|
Stealth Microwave, Inc.
|
XD010-24S-D2F |
1930-1990 MHz Class A/AB 12W CDMA Driver Amplifier
|
sirenza.com SIRENZA MICRODEVICES
|
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor BJT 双极型晶体管
|
GHz Technology Micrel Semiconductor, Inc.
|
PTFA192001F PTFA192001E |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
|
Infineon Technologies AG
|
MRF7S19100N |
1930?1990 MHz, 29 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs From old datasheet system
|
Motorola Semiconductor Products
|
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor TRANSISTOR | BJT | NPN | 27V V(BR)CEO | 14A I(C) | FO-91VAR
|
GHz Technology
|
MW5IC2030 |
GSM/GSM EDGE, W–CDMA, PHS 1930–1990 MHz, 30 W, 26 V RF LDMOS Wideband Integrated Power Amplifier
|
Motorola
|