| PART |
Description |
Maker |
| PTFA210701E PTFA210701F |
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| PTFB211501E PTFB211501F |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| PTFB211501F PTFB211501E |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| BLD6G22LS-50112 BLD6G22L-50112 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
|
NXP Semiconductors N.V.
|
| MAFR-000087-US1C1T |
Single Junction Drop-In Circulator 2110 MHz-2170 MHz
|
M/A-COM Technology Solutions, Inc.
|
| MAMXES0050 |
E-Series Surface Mount Mixer 2110 - 2170 MHz
|
MACOM[Tyco Electronics]
|
| PTF210451 PTF210451E |
LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 45 W 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTF210301 PTF210301A PTF210301E |
LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 30 W 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| MRF6S21100N |
MRF6S21100NBR1 2110-2170 MHz, 23 W Avg., 28 V, 2 x W-CDMA Lateral N-Channel RF Power MOSFETs
|
MOTOROLA
|
| MAPLST2122-060CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
|
Tyco Electronics
|
| PA1223 |
2110-2170 MHz. 5 Watt 28v. GaAs Ultra Linear Power Amplifier
|
MACOM[Tyco Electronics]
|
