| PART |
Description |
Maker |
| VSMF9700-GS18 VSMF9700-GS08 |
High Speed Infrared Emitting Diode, 890 nm
2.4 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
Vishay Siliconix
VISHAY SEMICONDUCTORS
|
| M67769A |
RF POWER MODULE 890-915MHz, 12.5V, 13W, FM MOBILE RADIO
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| 0898LP18A035 |
890 MHz Low Pass Filter
|
Johanson Technology Inc.
|
| VSMF2890GX01 |
High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
| VSMF2893GX01 |
High Speed Infrared Emitting Diodes, 890 nm, GaAlAs, DH
|
Vishay Siliconix
|
| TSHF5210 TSHF521009 |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero
|
http://
|
| SD1495 RF609 |
RF & MICROWAVE TRANSISTORS 850-890 MHz CLASS C BASE STATIONS
From old datasheet system
|
MICROSEMI[Microsemi Corporation]
|
| 0910-300M |
Bipolar/LDMOS Transistor
300 Watts - 50 Volts, 150us, 5% Radar 890 - 1000 MHz
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
|
| TSMF100011 |
High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero
|
Vishay Siliconix
|
| IRFIB7N50A IRFIB7N50APBF |
6.6 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)
HEXFET? Power MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
