PART |
Description |
Maker |
M36P0R9070E0 |
512 Mbit Flash memory 128 Mbit (Burst) PSRAM
|
Numonyx
|
IS75V16F128GS32 IS75V16F128GS32-7065BI |
3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
M48T129V-70PM1 M48T129V-85PM1 M48T129Y-70PM1 M48T1 |
5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER庐 SRAM 5.0 or 3.3 V, 1 Mbit (128 Kbit x 8) TIMEKEEPER? SRAM
|
STMicroelectronics
|
M29W128GH70N3E M29W128GL |
128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory 128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory
|
Numonyx B.V
|
M36LLR8760 M36L0R7050 M36L0R7050B0ZAQE M36L0R7050B |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 32 Mbit (2M x16) PSRAM, 1.8V Supply Multi-Chip Package 128兆位(多银行,多层次,突发)闪存32兆位00万16)移动存储芯片,1.8V电源多芯片封 CAP 2.2PF 200V 0.5PF C0H DIP-2 BULK S-MIL-C-39014 ER 23C 16 12 8 4 SKT RECP WALL CAP 0.1UF 50V 10% X7R DIP-2 BULK P-MIL-C-39014 128 Mbit (Multiple Bank / Multi-Level / Burst) Flash Memory 32 Mbit (2M x16) PSRAM From old datasheet system
|
STMicroelectronics N.V. ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
|
NP5Q128A13ESFC0E NP5Q128AE3ESFC0E |
128-Mbit, Quad/Dual/Single Serial Interface, 128-Kbyte Sectors Phase Change Memory (PCM) with 66MHz SPI Bus Interface
|
Numonyx B.V
|
IDT72V8981 IDT72V8981DB IDT72V8981J IDT72V8981J8 7 |
From old datasheet system 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128 128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology IDT
|
CY14V101NA-BA25XI CY14V101NA-BA25XIT CY14V101NA-BA |
1 Mbit (128 K x 8/64 K x 16) nvSRAM
|
Cypress
|
CY62137FV18LL-55BVXI CY62137FV18LL-55BVXIT |
2-Mbit (128 K 16) Static RAM
|
Cypress
|
CY62128ELL-45SXAT CY62128ELL-45SXI CY62128ELL-45ZX |
1-Mbit (128 K 8) Static RAM
|
Cypress
|