PART |
Description |
Maker |
SMI10021 |
100-113 Gbps 10:4 Mux/CMU with Dual-DQPSK Precoder for Short Reach Applications
|
Semtech Corporation
|
155-1519 |
SINGLEMODE FIBER PATCH CABLE, PVC SC-SC 30M MR3G - 1150TGREFLETOR150 - 113.5BN SINGLEMODE FIBER PATCH CABLE, PVC SC-SC 30M MR3G-1150TG PARABOLIC REFLETOR WITH 1150-113.5BN LAMP
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International Light Technologies, Inc. International Light Technologies Inc. GILWAY[Gilway Technical Lamp]
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IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V N-Channel Power MOSFETs/ 20 A/ 60-100 V CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲,60-100 V
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
LBS11406 |
113.6MHz SAW Filter 3MHz Bandwidth
|
SIPAT Co,Ltd
|
LBN11301 |
113.6MHz SAW Filter 10MHz Bandwidth
|
SIPAT Co,Ltd
|
RCP-0502PW69R8F RCP-0603PW69R8F RCP-0502PW97R6F RC |
RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 69.8 ohm, SURFACE MOUNT, 0502 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 69.8 ohm, SURFACE MOUNT, 0603 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 97.6 ohm, SURFACE MOUNT, 0502 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 97.6 ohm, SURFACE MOUNT, 0603 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 95.3 ohm, SURFACE MOUNT, 0502 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 976 ohm, SURFACE MOUNT, 0502 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 2 %, 100 ppm, 91 ohm, SURFACE MOUNT, 0502 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 953 ohm, SURFACE MOUNT, 0502 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 93.1 ohm, SURFACE MOUNT, 0502 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 2 %, 100 ppm, 910 ohm, SURFACE MOUNT, 0502 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 5 %, 100 ppm, 91 ohm, SURFACE MOUNT, 0502 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 5 %, 100 ppm, 910 ohm, SURFACE MOUNT, 0502 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 931 ohm, SURFACE MOUNT, 0502 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 90.9 ohm, SURFACE MOUNT, 0502 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 909 ohm, SURFACE MOUNT, 0502 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 1130 ohm, SURFACE MOUNT, 0502 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 113 ohm, SURFACE MOUNT, 0603 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 1130 ohm, SURFACE MOUNT, 0603 CHIP RESISTOR, METAL GLAZE/THICK FILM, 0.1 W, 1 %, 100 ppm, 113 ohm, SURFACE MOUNT, 0502 CHIP
|
International Manufacturing Services, Inc.
|
FSF2510 FSF2210 FSN1410 FSN1606 IRF540 |
N Channel MOSFET; Package: TO-254; trr (nsec): 600; t(on) (nsec): 100; ID (A): 25; RDS(on) (Ohms): 0.07; PD (W): 125; BVDSS (V): 100; Rq: 1; VSD (V): 2.3 SMALL SIGNAL, FET N Channel MOSFET; Package: TO-254; trr (nsec): 300; t(on) (nsec): 23; ID (A): 22; RDS(on) (Ohms): 0.1; PD (W): 100; BVDSS (V): 100; Rq: 1.3; VSD (V): 2.5 22 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET N Channel MOSFET; Package: TO-257; trr (nsec): 250; t(on) (nsec): 14; ID (A): 14; RDS(on) (Ohms): 0.18; PD (W): 50; BVDSS (V): 100; Rq: 2; VSD (V): 2.5 14 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET N Channel MOSFET; Package: TO-257; trr (nsec): 220; t(on) (nsec): 21; ID (A): 16; RDS(on) (Ohms): 0.07; PD (W): 50; BVDSS (V): 60; Rq: 2; VSD (V): 1.8 16 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp. STMicroelectronics N.V. MICROSEMI CORP
|
BSP372 Q67000-S300 BSP372E-6327 BSP372E6327 |
1.7 A, 100 V, 0.31 ohm, N-CHANNEL, Si, POWER, MOSFET SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated SIPMOS小信号晶体管(N通道增强模式逻辑层次额定雪崩 1.7 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
|
SIEMENS A G SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
PSMN9R5-100PS |
N-channel 100 V 9.6 m standard level MOSFET in T0220 89 A, 100 V, 0.0096 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
|
MTY100N10E ON2707 Y100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
|
PCK-716S |
160 MHz - 320 MHz RF/MICROWAVE PHASE DETECTOR, 20 dBm INPUT POWER-MAX 113
|
Synergy Microwave, Corp.
|
SI4482DY SI4482DY-T1 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET N-Channel 100-V (D-S) MOSFET N-Channel, 100-V Single
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix]
|
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