| PART |
Description |
Maker |
| TA020-060-24-21 |
2 ~ 6GHz 24dB Gain 21dBm Power Amplifier
|
Transcom, Inc.
|
| S10040220P |
GaAs Push Pull Hybrid 40 - 1000MHz 22dB min. Gain @ 1000MHz 270mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| LX5506B LX5506BLQ |
InGaP HBT 4 6GHz Power Amplifier
From old datasheet system
InGaP HBT 4 6GHz Power Amplifier
|
MICROSEMI[Microsemi Corporation]
|
| PH2226-50M |
Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100楼矛s Pulse, 10% Duty
Radar Pulsed Power Transistor 50W, 2.2-2.6GHz, 100μs Pulse, 10% Duty
|
Tyco Electronics
M/A-COM Technology Solutions, Inc.
|
| PDW06398 |
6GHz 2-way Wilkinson Power Divider
|
Dielectric Laboratories...
|
| EIM8911-5 |
8.95-10.6GHz Multi-Stage Power Amplifier
|
Excelics Semiconductor, Inc.
http://
|
| TGA2576-2-FL TGA2576-2-FL-15 |
2.5 to 6GHz 40W GaN Power Amplifier
|
TriQuint Semiconductor
|
| LX5506 |
InGaP HBT 4.5 - 6GHz Power Amplifier
|
MICROSEMI[Microsemi Corporation]
|
| 2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A.
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A.
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.
8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS
From old datasheet system
|
General Electric Solid State
ETC[ETC]
|
| MRF16006 MRF16006-15 |
The RF Line NPN Silicon Power Transistor 6.0W , 1.6GHz, 28V
|
M/A-COM Technology Solu...
M/A-COM Technology Solutions, Inc.
|
| BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB
Silicon N-Channel MOSFET Triode
|
INFINEON[Infineon Technologies AG]
|
