| PART |
Description |
Maker |
| FDB045AN08A0 FDB045AN08NBSP FDB045AN08 |
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5m?/a>
N-Channel UltraFET ?Trench MOSFET 75V, 80A, 4.5mOhm
From old datasheet system
N-Channel UltraFET® Trench MOSFET
N-Channel UltraFET Trench MOSFET 75V/ 80A/ 4.5m
N-Channel UltraFET Trench MOSFET 75V, 80A, 4.5mз 19 A, 75 V, 0.0045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Pch enhancement-type MOS FET
|
NEC[NEC]
|
| TPCF8402 TPCF840209 |
Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
|
Toshiba Semiconductor
|
| KU035N06P-15 |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU047N08P KU047N08P-15 |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| KU024N06P |
N-ch Trench MOS FET
|
KEC
|
| KU034N08P |
N-ch Trench MOS FET
|
KEC(Korea Electronics)
|
| TPH12008NH |
MOSFETs Silicon N-channel MOS (U-MOS
DC-DC Converters Switching Voltage Regulators Motor Drivers
MOSFETs Silicon N-channel MOS (U-MOS
|
Toshiba Semiconductor
|
| 2SK3577 2SK3577-T1B 2SK3577-T2B |
N Channel enhancement MOS FET
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| VT60L45PW |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| MBRF10100 MBRF10100-E34W MBRB10100 MBRB10100-E34W |
Trench MOS Schottky technology
|
Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
|
| 2SJ353 2SJ353-T D11216EJ1V0DS00 |
From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOS-type silicon field effect transistor (-60
|
NEC[NEC]
|
