| PART |
Description |
Maker |
| M393B1G73BH0 M393B1G70BH0 |
240pin Registered DIMM based on 4Gb B-die
|
Samsung semiconductor
|
| HMT451R7AFR8A-RD HMT451R7AFR8A-H9 HMT451R7AFR8A-PB |
DDR3L SDRAM Registered DIMM Based on 4Gb A-die
|
Hynix Semiconductor
|
| HMT451U7AFR8C-PB HMT451U7AFR8C-H9 HMT451U7AFR8C-G7 |
DDR3 SDRAM Unbuffered DIMMs Based on 4Gb A-Die
|
Hynix Semiconductor
|
| HMT451U7AFR8A-H9 HMT451U7AFR8A-G7 HMT451U6AFR8A-PB |
DDR3L SDRAM Unbuffered DIMMs Based on 4Gb A-Die
|
Hynix Semiconductor
|
| HMT84GL7AMR4C-RD HMT84GL7AMR4C-PB HMT84GL7AMR4C-H9 |
DDR3(L) SDRAM Load Reduced DIMM Based on 4Gb A-die
|
Hynix Semiconductor
|
| K9F6408U0A-TCB0 K9F6408U0A-TIB0 |
From old datasheet system
EEPROM,NAND FLASH,8MX8,CMOS,TSOP,44PIN,PLASTIC
8M x 8 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
Samsung Electronics Inc
|
| TS24MP320 TS2GMP320 |
2G/4G x8 Flash Memory
2GB/4GB USB Flash Drive
|
Transcend Information. Inc.
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| KM29W040AT KM29W040AIT |
V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory
512K x 8 bit NAND Flash Memory
|
Samsung semiconductor
Samsung Electronic
|
| TS4GMP850 TS8GMP850 |
4GB/8GB USB Flash Drive
|
Transcend Information. Inc.
|
| TC58DVM72A1F TC58DVM72A1FT00 TC58DVM72F1FT00 TC58D |
Flash - NAND
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
