| PART |
Description |
Maker |
| ISPLSI5256VE-125LT100I ISPLSI5256VE-100LF256I ISPL |
In-system programmable 3.3V SuperWIDE high density PLD. fmax 80 MHz, tpd 12 ns.
EE PLD, 10 ns, PBGA256
In-system programmable 3.3V SuperWIDE high density PLD. fmax 100 MHz, tpd 10 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 125 MHz, tpd 7.5 ns.
In-system programmable 3.3V SuperWIDE high density PLD. fmax 165 MHz, tpd 6.0 ns.
|
Lattice Semiconductor, Corp.
LATTICE SEMICONDUCTOR CORP
|
| AS-V-345XT 0191540012 |
BUTT SPLICE PVC INSUL/EXPD TPD (AS-V-345
|
Molex Electronics Ltd.
|
| MS7202AL MS7201AL MS7200L MS7200-25FC MS7201-25FC |
25ns; 256 x 9, 512 x9, 1K x 9 CMOS FIFO
256 X 9 OTHER FIFO, 25 ns, PQCC32
25ns 256 x 9, 512 x9, 1K x 9 CMOS FIFO
256 x 9 CMOS FIFO
256 x 9, 512 x 9, 1K x 9 CMOS FIFO
FIFO, Single, 256x9, Uni-directional, 5V Supply, Commercial, LDCC, 32-Pin
|
MOSEL-VITELIC
Mosel Vitelic, Corp.
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| ES1D-13-F ES1C-13-F |
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 30A-ifsm 0.98V-vf 25ns 5uA-ir SMA 5K/REEL-13 1 A, 200 V, SILICON, SIGNAL DIODE
RECTIFIER FAST-RECOVERY SINGLE 1A 150V 30A-ifsm 0.98V-vf 25ns 5uA-ir SMA 5K/REEL-13
|
Diodes, Inc.
DIODES INC
|
| ST1KA ST1KB ST-SKL |
IC ACEX 1K FPGA 50K 144-TQFP
IC, EPM7032 EPLD TPD=15NS
PHOTOTRANSISTOR | NPN | 880NM PEAK WAVELENGTH | DO-31VAR 光电晶体管|叩| 880NM峰值波长|的DO - 31VAR
|
HIROSE ELECTRIC Co., Ltd.
|
| ES3XB-13-F ES3X-13-F ES3C-13-F ES3B-13-F |
3.0A SURFACE MOUNT SUPER-FAST RECTIFIER
RECTIFIER FAST-RECOVERY SINGLE 3A 150V 100A-ifsm 0.9V-vf 25ns 10uA-ir SMC 3K/REEL-13 3 A, 150 V, SILICON, RECTIFIER DIODE
RECTIFIER FAST-RECOVERY SINGLE 3A 100V 100A-ifsm 0.9V-vf 25ns 10uA-ir SMC 3K/REEL-13 3 A, 100 V, SILICON, RECTIFIER DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| 5962-01533 UT8Q512K32-SWC 8Q512K32 UT8Q512K32 UT8Q |
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
16Megabit SRAM MCM 16Megabit的SRAM亿立方米
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose none
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class Q. Lead finish gold. Total dose none.
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K32 16Megabit SRAM MCM: SMD. 25ns access time, 3.3V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
|
Aeroflex Circuit Techno...
http://
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
|
| UT9Q512 |
512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V and 5V.
|
Aeroflex Circuit Technology
|
| WPS512K8C-20RJMB WPS512K8LB-15RJMB WPS512K8LB-25RJ |
512K x 8 SRAM, 20ns
512K x 8 SRAM, low power, 15ns
512K x 8 SRAM, low power, 25ns
512K x 8 SRAM, 15ns
512K x 8 SRAM, 25ns
|
White Electronic Designs
|
| GS820E32A GS820E32AQ-4 GS820E32AQ-6I GS820E32AT-6I |
66MHz 18ns 64K x 32 2M synchronous burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
64K x 32 / 2M Synchronous Burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
|
| CY7C344B-15HI CY7C344B-25HI CY7C344B-15WC CY7C344B |
32-macrocell EPLD, 15ns
32-macrocell EPLD, 25ns
|
Cypress
|
