PART |
Description |
Maker |
FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压,1.50欧姆,拉德硬,SEGR性,P通道功率MOSFET 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF From old datasheet system 3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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Intersil, Corp. INTERSIL[Intersil Corporation]
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FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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INTERSIL[Intersil Corporation]
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FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 FS |
From old datasheet system 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 2A/ 100V/ 0.170 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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INTERSIL[Intersil Corporation]
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FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R |
11A/ 100V/ 0.210 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs From old datasheet system
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INTERSIL[Intersil Corporation]
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FSJ9055R4 FSJ9055D FSJ9055D1 FSJ9055D3 FSJ9055R FS |
55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
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INTERSIL[Intersil Corporation]
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FSS9230R4 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FS |
4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 4A/ -200V/ 1.60 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
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INTERSIL[Intersil Corporation]
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FSL230R3 FSL230 FSL230D FSL230D1 FSL230D3 FSL230R |
5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 5A/ 200V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
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INTERSIL[Intersil Corporation]
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FSJ264R4 FSJ264D1 FSJ264D3 FSJ264R FSJ264R1 FSJ264 |
33A/ 250V/ 0.080 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:10; Connector Shell Size:18; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight Circular Connector; MIL SPEC:MIL-C-5015; Body Material:Metal; Series:GT; No. of Contacts:6; Connector Shell Size:14S; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
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INTERSIL[Intersil Corporation]
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RHF43B11 |
Rad-hard precision bipolar single operational amplifier
|
STMicroelectronics
|
BFS17W BFS17W. |
RF-Bipolar - For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA RF-Bipolar NPN Type Transistors with transition frequency from 1 to 6 GHz NPN Silicon RF Transistor
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INFINEON[Infineon Technologies AG]
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RHFAC151K01V RHFAC151K02V RHFAC157K01V RHFAC157K02 |
Rad-Hard 8-Channel Multiplexer Rad-Hard Quad 2-Channel Multiplexer Rad-Hard Hex Inverter Rad-Hard Quad 2-Input NOR Gate Rad-Hard Quad 2-Input NAND Gate Rad-Hard Triple 3-Input NAND Gate Rad-Hard Quad 2-Input AND Gate Rad-hard hex Schmitt inverter low power Rad-Hard Quad 2-Input OR Gate Rad-Hard Hex D-Type Flip-Flop With Clear Rad-Hard Octal D-Type Flip-Flop With Clear Rad-Hard Octal D-Type Latch 3-state Rad-Hard Quad exclusive OR Rad-Hard Octal Bus Buffer 3-state Rad-Hard 16-bit D-Type Latch 3-state
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ST Microelectronics
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2N3440S |
Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. Bipolar NPN Device.
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SEME-LAB[Seme LAB]
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