| PART |
Description |
Maker |
| 28F128P33 |
StrataFlash Embedded Memory
|
Intel
|
| JS28F256P33BF JS28F256P33BFE |
NumonyxTM StrataFlash Embedded Memory
|
Micron Technology
|
| TE28F640P30B85 TE28F640P30T85 TE28F128P30XXX RC28F |
Intel StrataFlash Embedded Memory
|
INTEL[Intel Corporation]
|
| 28F640J3A 28F128J3A 28F320J3A |
3 Volt Intel StrataFlash Memory(3 V 64M位英特尔StrataFlash存储
3 Volt Intel StrataFlash Memory(3 V 128M位Strata闪速存储器)
3 Volt Intel StrataFlash Memory(3 V 32M位英特尔StrataFlash存储
|
Intel Corp.
|
| JS48F4400P0R0C0 JS48F4400P0R0Q0 JS48F4400P0R0W0 JS |
StrataFlash垄莽 Cellular Memory
StrataFlash庐 Cellular Memory
StrataFlash? Cellular Memory
StrataFlash? Cellular Memory
|
Numonyx B.V
http://
|
| GE28F256L18T85 GE28F640L18T85 GE28F128L18T85 NZ48F |
StrataFlash Wireless Memory
|
Intel Corp.
Intel Corporation
|
| JS28F128J3A |
Intel StrataFlash Memory (J3)
|
Intel Corporation
|
| 28F320J5 28F640J5 |
INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT
|
Intel
|
| TE28F640J3 TE28F256J3 TE28F320J3C-110 TE28F128J3A- |
8M X 16 FLASH 2.7V PROM, 120 ns, PDSO56
Intel StrataFlash Memory (J3)
Strata Flash Memory 256M
256M Strata Flash Memory
|
NUMONYX
Intel Corporation
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| GE28F640L30B85 GE28F640L30T85 GE28F256L30B85 |
1.8 Volt Intel StrataFlash?? Wireless Memory with 3.0-Volt I/O (L30)
|
INTEL CORP
|
