| PART |
Description |
Maker |
| GS8160Z18T-200 GS8160Z18BT-250 GS8160Z18BT-150 GS8 |
18Mb Burst SRAMs
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8162Z18BB-150IV GS8162Z18BB-150V GS8162Z18BB-200 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8162Z72C-200I GS8162Z72C GS8162Z72C-133 GS8162Z7 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8162Z72CC-150 GS8162Z72CC-333I GS8162Z72CC GS816 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8161Z32BGD-150V GS8161Z18BT-150IV GS8161Z18BT-15 |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
GSI[GSI Technology]
|
| GS8161Z36BD-150 GS8161Z18BD-200 GS8161Z36BD-200 GS |
18Mb Pipelined and Flow Through Synchronous NBT SRAM
|
http://
|
| IDT71P74104S167BQ IDT71P74804S250BQ IDT71P74604S20 |
18Mb Pipelined QDR II SRAM Burst of 4 2M X 9 QDR SRAM, 0.5 ns, PBGA165
18Mb Pipelined QDR II SRAM Burst of 4 1M X 18 QDR SRAM, 0.45 ns, PBGA165
18Mb Pipelined QDR II SRAM Burst of 4 512K X 36 QDR SRAM, 0.45 ns, PBGA165
18Mb Pipelined QDR II SRAM Burst of 4 2M X 8 QDR SRAM, 0.5 ns, PBGA165
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| IS61VPD51236A IS61VPD51236A-200B3 IS61VPD51236A-20 |
512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
| GS8162Z72CC-250 GS8162Z72CC-150 GS8162Z72CC-150I G |
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 5.5 ns, PBGA209
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 7.5 ns, PBGA209
18Mb Pipelined and Flow Through Synchronous NBT SRAM 256K X 72 ZBT SRAM, 6.5 ns, PBGA209
|
GSI Technology, Inc.
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| GS816273C-250 GS816273C-250I GS816273C-225 GS81627 |
18Mb Burst SRAMs
256K x 72 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
