PART |
Description |
Maker |
ENA0412A |
Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single TP/TP-FA
|
ON Semiconductor
|
2SC6094-TD-E ENA0410A |
Bipolar Transistor 60V, 3A, Low VCE(sat), NPN Single PCP
|
ON Semiconductor
|
2SD2396 D2396 2SD2396H |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220VAR 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3A条一(c)|20VAR Low Frequency Transistor (60V, 3A) Low Frequency Transistor (60V/ 3A)
|
PCA Electronics, Inc. Rohm CO.,LTD.
|
BDY23B |
Bipolar NPN Device in a Hermetically sealed TO3 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-3
|
Seme LAB
|
2N2906ADCSM |
TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 600MA I(C) | LLCC Dual Bipolar PNP Devices in a hermetically sealed
|
Seme LAB
|
2SD2318 2SD2318V |
High-current gain Power Transistor (-60V/ -3A) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset High-current gain Power Transistor(60V/ 3A) High-current gain Power Transistor(60V, 3A)
|
Rohm CO.,LTD.
|
2SC4500L 2SC4500S 2SC4500L/S |
SMALL SIGNAL TRANSISTOR TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-251AA 晶体管|晶体管|达林顿|叩| 60V的五(巴西)总裁| 1A条一c)|52AA TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 1A I(C) | TO-252AA Silicon NPN Darlington Transistor
|
Hitachi Semiconductor
|
FX6ASH03 FX6ASH06 FX6VSH03 FX6KMH03 FX6SMH06 FX6UM |
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-247VAR TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 6A I(D) | TO-220AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | SOT-186 TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 70A I(D) | TO-263AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-252AA 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|52AA TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 30A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 3A I(D) | TO-263AB 晶体管| MOSFET的| P通道| 60V的五(巴西)直| 3A条(丁)|63AB TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 30A I(D) | SOT-186 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 30A条(丁)|的SOT - 186
|
Renesas Electronics, Corp. NXP Semiconductors N.V.
|
2SD880 2SD880O |
POWER TRANSISTORS(3A/60V/30W) TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB POWER TRANSISTORS(3A,60V,30W)
|
MOSPEC SEMICONDUCTOR CORP. MOSPEC[Mospec Semiconductor]
|
STRS6703 STRS6704 STR-S6703 STR-S6704 |
Off-Line Switching Regulator With Bipolar Switching Transistor(峰值输出电2A,输出功率直40W00V输出,带双极开关晶体管的脱线开关稳压器) (STRS6703 / STRS6704) OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR OFF-LINE SWITCHING REGULATORS WITH BIPOLAR SWITCHING TRANSISTOR
|
Allegro MicroSystems, Inc.
|
GET4870 GET4871 MPS2906A GES2906A GES2904 GES2905A |
UNIJUNCTION TRANSISTOR|5UA I(P)|TO-18VAR TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 350MA I(C) | TO-92 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 600MA I(C) | TO-92 晶体管|晶体管|进步党| 40V的五(巴西)总裁| 600毫安一(c)|2 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | TO-92 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 600毫安一(c)|2 UNIJUNCTION TRANSISTOR|2UA I(P)|TO-92 单结晶体管|五成一(规划)|2
|
Cornell Dubilier Electronics, Inc. Mitel Networks, Corp. GE Security, Inc.
|
2N3804 2N4985 2N1650 2N2632 |
SILICON UNIDIRECTIONAL SWITCH|8.2V V(BO) MAX|300UA I(S)|TO-18 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 3A I(C) | STR-10 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 5A I(C) | STR-10 晶体管|晶体管|叩| 60V的五(巴西)总裁| 5A条一(c)|个STR - 10 TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 50MA I(C) | TO-71 晶体管|晶体管|进步党| 60V的五(巴西)总裁| 50mA的一(c)|1
|
Mitsubishi Electric, Corp. Powerex, Inc.
|