| PART |
Description |
Maker |
| W9751G6KB-18 W9751G6KB-25 W9751G6KB-3 W9751G6KB25A |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| M13S2561616A-2A |
Double-data-rate architecture, two data transfers per clock cycle
|
Elite Semiconductor Mem...
|
| W631GG6KB-15 W631GG6KB12A W631GG6KB12I W631GG6KB12 |
Double Data Rate architecture: two data transfers per clock cycle
|
Winbond
|
| GS8170DD36C-333 GS8170DD36C-250 GS8170DD36C-300 GS |
18Mb x2Lp CMOS I/O Double Data Rate SigmaRAM 512K X 36 STANDARD SRAM, 2.1 ns, PBGA209
18Mb 1x2Lp CMOS I/O Double Data Rate SigmaRAM 35.71x2Lp的CMOS的I / O双数据速率SigmaRAM
|
GSI Technology, Inc.
|
| K4D26323AA-GL |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL Data Sheet
|
Samsung Electronic
|
| HYI18T1G400BF-2.5 HYI18T1G400BF-2.5F HYI18T1G800BC |
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.6 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 256M X 4 DDR DRAM, 0.45 ns, PBGA68
1-Gbit Double-Data-Rate-Two SDRAM 64M X 16 DDR DRAM, 0.5 ns, PBGA84
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda AG
http://
|
| NT5DS4M32EG-6 NT5DS4M32EG NT5DS4M32EG-5 NT5DS4M32E |
1M 】 32 Bits 】 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| NT5DS4M32EG-5 NT5DS4M32EG-5G NT5DS4M32EG-6 |
1M × 32 Bits × 4 Banks Double Data Rate Synchronous RAM With Bi-Directional Data Strobe and DLL
|
NanoAmp Solutions, Inc.
|
| HYB18T512800B2FL-3S HYB18T512400B2F-3.7 |
512-Mbit Double-Data-Rate-Two SDRAM 64M X 8 DDR DRAM, 0.45 ns, PBGA60
512-Mbit Double-Data-Rate-Two SDRAM 128M X 4 DDR DRAM, 0.5 ns, PBGA60
|
Qimonda AG
|
| VDD8616A8A VDD8616A8A-75B VDD8608A8A-75BA |
Double Data Rate SDRAM
|
http://
List of Unclassifed Manufacturers
ETC
|
| EM47FM1688MCA-15 |
Double DATA RATE 3 SDRAM
|
Eorex Corporation
|
| HYI18T1G160B |
1-Gbit Double-Data-Rate-Two SDRAM
|
Qimonda
|
