| PART |
Description |
Maker |
| BCM857BS BCM857BV BCM857BV115 BCM857DS135 BCM857DS |
PNP/PNP matched double transistors; Package: SOT457 (SC-74); Container: Tape reel smd 100 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP/PNP matched double transistors
|
NXP Semiconductors N.V.
|
| PUMB2 PEMB2-PUMB2-15 |
PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.
PNP/PNP resistor-equipped transistors R1 = 47 k? R2 = 47 k?
|
NXP Semiconductors
|
| DTA143EM3T5G |
Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
ON Semiconductor
|
| MJE5731A MJE5731 MJE5730 ON2039 |
POWER TRANSISTORS PNP SILICON 1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
1.0 AMPERE POWER TRANSISTORS
From old datasheet system
|
ON Semiconductor
|
| BC327-16 BC327 BC327-25 BC328-25 BC328 BC328-16 |
Amplifier Transistors(PNP Silicon)
Amplifier Transistors(PNP)
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
|
MOTOROLA INC
ON Semiconductor
MOTOROLA[Motorola, Inc]
Motorola, Inc.
|
| ZXT10P40DE6 ZXT10P40DE6TA ZXT10P40DE6TC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
40V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
PNP Low Sat Transistor
|
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| 2SA2040 2SC5707 C5707 2SA2040TP 2SA2040TP-FA 2SC57 |
PNP Epitaxial Planar Silicon Transistors High Current Switching Applications
PNP / NPN Epitaxial Planar Silicon Transistors
PNP/NPN Epitaxial Planar Silicon Transistors
TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 8A I(C) | TO-251VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 8A I(C) | TO-252VAR
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
|
SANYO[Sanyo Semicon Device]
Matsshita / Panasonic
|
| PDTA144E PDTA144EE PDTA144EU PDTA144EU115 PDTA144E |
PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 47 kOhm PNP配电阻型晶体管；R1=47千欧姆，R2=47千欧
PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ
PNP resistor-equipped transistors; R1 = 47 k惟, R2 = 47 k惟
|
NXP Semiconductors N.V.
|
| PDTA114YEF PDTA114YT PDTA114YM |
PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = 47 kOhm PNP配电阻型晶体管；R1=10千欧姆，R2=47千欧
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ
PNP resistor-equipped transistors; R1 = 10 k楼?, R2 = 47 k楼?
|
NXP Semiconductors N.V.
|
| 2N4403ZL1 2N4403RLRP 2N4403RLRM 2N4403RL 2N4403RLR |
General Purpose Transistors 600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
General Purpose Transistors, PNP Silicon
|
ON Semiconductor
|
| UMT3906 SST3906 MMST3906 2N3906 A5800337 MMST3906T |
晶体管|晶体管|进步党| 40V的五（巴西）总裁| 200mA的一c）|的SOT - 346
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | SOT-346
From old datasheet system
PNP General Purpose Transistor
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
ROHM[Rohm]
|
