| PART |
Description |
Maker |
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| 2SB468 |
GERMANIUM PNP DIFFUSED BASE ALLOYED EMITTER
|
List of Unclassifed Manufacturers
|
| TIP127 TIP125 TIP126 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
SemiHow Co.,Ltd.
TAI-SAW TECHNOLOGY CO.,...
|
| BSS63R |
SOT23 PNP silicon planar Emitter-base voltage VEBO -6 V
|
TY Semiconductor Co., Ltd
|
| NTE99 |
Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode
|
NTE[NTE Electronics]
|
| OP793 OP798 |
NPN Pho to tran sis tor with Base- Emitter Resistor
|
OPTEK Technologies
|
| HJ3669 HJ3953 |
Emitter to base voltage:3V 200mA NPN epitaxial planar transistor
|
Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectroni...
|
| MJ10009 MJ10008 |
SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE
|
BOCA[Boca Semiconductor Corporation]
|
| MJ10015-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| MJ10005-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| MJD112L MJD112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
