| PART |
Description |
Maker |
| RFCM3326SQ RFCM3326TR13 RFCM3326TR7 |
45-1218MHZ GAAS/GAN POWER DOUBLER MODULE
|
RF Micro Devices
|
| QPA3240 |
GaAs/GaN Power Doubler Hybrid 45MHz to 1218MHz
|
TriQuint Semiconductor
|
| D10040200PL1 |
45-1000MHz GaAs/GaN PWR DBLR HYBRID
|
RF Micro Devices
|
| D10040230PL1 |
45-1000MHz GaAs/GaN PWR DBLR HYBRID
|
RF Micro Devices
|
| CFH2162-P1 CFH2162-P109 |
800 to 900 MHz 36 dBm Power GaAs FET UHF BAND, GaAs, N-CHANNEL, RF POWER, JFET
|
Mimix Broadband, Inc.
|
| GP1001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| CGH40010 |
10 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| MGF0909A MGF0909 0909A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
L /S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TGI1314-50L |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| RFHA1006 |
9W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
|
