| PART |
Description |
Maker |
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| QPA3240 |
GaAs/GaN Power Doubler Hybrid 45MHz to 1218MHz
|
TriQuint Semiconductor
|
| QPA3340 |
CATV Power Doubler Hybrid 1003MHz 23dB
|
TriQuint Semiconductor
|
| T1G4012036-FL-15 |
120W Peak Power, 24W Average Power, 36V DC ?3.5 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| GP2001 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| GX2441 |
RF POWER GAN TRANSISTOR
|
Polyfet RF Devices
|
| TG2000-10 |
GaN Hybrid Power Amplifier
|
RFHIC
|
| CLF1G0035-100P CLF1G0035S-100P |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CLF1G0035S-100 CLF1G0035-100 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| TGA2214 TGA2214-15 |
2 to 18 GHz 5W GaN Power Amplifier
|
TriQuint Semiconductor
|
| RFHA1006 |
9W GaN WIDEBAND POWER AMPLIFIER
|
RF Micro Devices
|
