| PART |
Description |
Maker |
| TC58BYG0S3HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG2S0HBAI4 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| TC58BVG2S0HTA00 |
BENAND (Built-in ECC SLCNAND)
|
TOSHIBA
|
| M368L3223FTN-CB3LAA M368L1624FTM-CB3AA M381L6423FT |
184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC 184pin缓冲模块，基56Mb的F -死去64/72-bit非ECC / ECC
|
Sanken Electric Co.,Ltd.
Sanken Electric Co., Ltd.
|
| M381L6523DUM-LCC M368L2923DUN-CB3 M368L2923DUN-CCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| M381L6523BUM-LCC M368L2923BTM-CCC M368L2923BTM-LCC |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II
|
SAMSUNG[Samsung semiconductor]
|
| M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 |
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 TSOP-II免费（符合RoHS
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IBM11N4845BB IBM11N4845CB |
4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 带纠错代码保护的小外形双列直插动态RAM模块) 4米72片，杀死保护ECC的上内存模块米72带纠错代码保护的小外形双列直插动态内存模块）
4M x 72 Chip-Kill Protect ECC-on-DIMM Module(4M x 72 甯????唬????ょ?灏??褰㈠?????????AM妯″?)
|
International Business Machines, Corp.
IBM Microeletronics
|
| UN8231A UN8231 UNR8231A UNR8231 0706 UNR8231/UNR82 |
UNR8231/UNR8231A (UN8231/UN8231A) - NPN Transistor with built-in Resistor
From old datasheet system
Transistors with built-in Resistor
|
Matsshita / Panasonic
|
| EMA2 |
PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
Built-In Biasing Resistors, R1 = R2 = 47kW.
|
Rohm
|
| CXD8941BQ |
CMOS ECC and RLL 1-7 Encoder
|
ETC
|
