PART |
Description |
Maker |
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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STB60NE03L-10 5466 |
N - CHANNEL ENHANCEMENT MODE ?SINGLE FEATURE SIZE ?POWER MOSFET N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET From old datasheet system N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET N-CHANNEL Power MOSFET PC 8C 8#20 SKT RECP -通道增强型“特征尺寸单”功率MOSFET
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STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics STMicroelectronics N.V.
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STW12NA60 STH12NA60_FI 3561 STH12NA60 STH12NA60FI |
From old datasheet system N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Supercapacitor; Capacitance:0.47F; Series:EDL; Voltage Rating:5.5VDC; Capacitor Dielectric Material:Carbon Aerogel Foam; Package/Case:Stacked Coin N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET)
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SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
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STP2N60FI STP2N60 3137 |
N-Channel Enhancement Mode Power MOS Transistor(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率MOSFET的) N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
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STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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STB60N03L-10 4892 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PC 3C 38#16 PIN RECP N-CHANNEL Power MOSFET
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STMICROELECTRONICS[STMicroelectronics] 意法半导 ST Microelectronics
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07N70CR-A 07N70CP-A SSM07N70CR-A SSM07N70CP SSM07N |
N Channel Enhancement mode Power MOSFET N-CHENNEL Enhancement-mode Power MOSFET
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Silicon Standard ETC[ETC] List of Unclassifed Manufacturers
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IXFH9N80 IXFH8N80 |
HiPerFET Power MOSFETs - N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电.1Ω的N沟道增强B>HiPerFET功率MOSFET) Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS[IXYS Corporation]
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SSU50N10 SSU50N10-15 |
54A , 100V , RDS(ON) 22m N-Ch Enhancement Mode Power MOSFET N-Ch Enhancement Mode Power MOSFET
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SeCoS Halbleitertechnologie GmbH SeCoS Halbleitertechnol...
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APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
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Advanced Power Technology Ltd.
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SPD07N20 SPD07N20G SPD07N2008 SPU07N20G SPD07N20GX |
SIPMOS? Power Transistor Features N channel Enhancement mode Avalanche rated SIPMOSò Power Transistor Features N channel Enhancement mode Avalanche rated 7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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Infineon Technologies AG
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STP33N10FI STP33N10 3141 |
N-Channel Enhancement Mode Power MOS Transistor(N娌??澧?己妯″????MOSFET) N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
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STMICROELECTRONICS[STMicroelectronics]
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