PART |
Description |
Maker |
SPP47N10L |
100-V MOS transistors in S-FET technology( 采用S-FET 技术制作的 100-V MOS 型晶体管) 47 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SIEMENS AG
|
UPA1716 UPA1716G PA1716 UPA1716G-E1 UPA1716G-E2 |
Pch enhancement type power MOS FET SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE MOS Field Effect Transistor
|
NEC[NEC]
|
2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH SWITCHING P-channel MOS FET (-30V, -2A)
|
NEC[NEC]
|
RJK1002DPP-E0 RJK1002DPP-E0-T2 RJK1002DPP-E0-15 |
N-Channel MOS FET 100 V, 70 A, 7.6 m N-Channel MOS FET 100 V, 70 A, 7.6 m?
|
Renesas Electronics Corporation
|
2SK2938 |
Silicon N Channel MOS FET(N娌??MOSFET) Silicon N Channel MOS FET(N沟道MOSFET) 通道场效应晶体管(不适用沟道MOSFET的) From old datasheet system
|
Hitachi,Ltd.
|
NP40N10PDF NP40N10PDF-E1-AY NP40N10YDF-E1-AY NP40N |
100 V ?40 A ?N-channel Power MOS FET Application: Automotive 100 V ?40 A ?N-channel Power MOS FET Application: Automotive
|
Renesas Electronics Corporation
|
2SK3212 2SK3212-E |
10 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
NP100P06PDG-E2-AY NP100P06PDG-E1-AY NP100P06PDG-15 |
100 A, 60 V, 0.0078 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN SWITCHING P-CHANNEL POWER MOS FET
|
HIROSE ELECTRIC Co., Ltd. American Bright Optoelectronics, Corp. Renesas Electronics Corporation
|
2SJ541 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ483 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|