| PART |
Description |
Maker |
| IRF5Y3710CM |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.035ohm, Id=18A*) 功率MOSFET N沟道（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.035ohm，身份证\u003d 18A
POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.035ohm Id=18A*)
THRU-HOLE (TO-257AA) 100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| STP36NE06FP STP36NE06 5994 |
N-Channel 60V-0.032Ω-36A- TO-220/TO-220FP STripFETTM Power MOSFET(N沟道功率MOSFET) N沟道60V的，0.032Ω- 36A条，TO-220/TO-220FP STripFETTM功率MOSFET（不适用沟道功率MOSFET的）
N - CHANNEL 60V - 0.032 - 36A - TO-220/TO-220FP STripFETTM POWER MOSFET
From old datasheet system
N - CHANNEL 60V - 0.032ohm - 36A - TO-220/TO-220FP STripFET POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRF640 RF1S640SM FN1585 |
18A, 200V, 0.180 Ohm,, N-Channel PowerMOSFET(18A, 200V, 0.180 Ohm,N娌??澧?己?????OS?烘?搴??)
From old datasheet system
18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
|
INTERSIL CORP
|
| TD25F12KSB-A DT25F12KSB-A DT18F11KFB-K DT18F11KFC- |
Transient Voltage Suppressor Diodes
THYRISTOR MODULE|DOUBLER|CC|1.1KV V(RRM)|18A I(T)
THYRISTOR MODULE|DOUBLER|CC|1KV V(RRM)|18A I(T)
THYRISTOR MODULE|DOUBLER|CC|800V V(RRM)|18A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|800V V(RRM)|25A I(T) 晶闸管模块|可控硅|双|消委会| 800V的五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|DOUBLER|CC|1.2KV V(RRM)|18A I(T) 晶闸管模块|倍增|消委会| 1.2KV五（无线资源管理）| 18A条疙（T
THYRISTOR MODULE|DOUBLER|CC|1.1KV V(RRM)|25A I(T) 晶闸管模块|倍增|消委会| 1.1KV五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|DOUBLER|CA|1.1KV V(RRM)|18A I(T) 晶闸管模块|倍增|加利福尼亚州| 1.1KV五（无线资源管理）| 18A条疙（T
THYRISTOR MODULE|DOUBLER|CA|800V V(RRM)|18A I(T) 晶闸管模块|倍增|加利福尼亚州| 800V的五（无线资源管理）| 18A条疙（T
THYRISTOR MODULE|DOUBLER|CA|1.1KV V(RRM)|25A I(T) 晶闸管模块|倍增|加利福尼亚州| 1.1KV五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|1.1KV V(RRM)|25A I(T) 晶闸管模块|倍增|半CNTLD |负| 1.1KV五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|DOUBLER|CA|1.2KV V(RRM)|25A I(T) 晶闸管模块|倍增|加利福尼亚州| 1.2KV五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|DOUBLER|CC|1KV V(RRM)|25A I(T) 晶闸管模块|倍增|消委会| 1KV交五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|SCR|DUAL|CA|1.2KV V(RRM)|18A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 1.2KV五（无线资源管理）| 18A条疙（T
THYRISTOR MODULE|SCR|DUAL|CC|1.1KV V(RRM)|25A I(T) 晶闸管模块|可控硅|双|消委会| 1.1KV五（无线资源管理）|5A我（翻译
THYRISTOR MODULE|SCR DOUBLER|1.1KV V(RRM)|25A I(T) 晶闸管模块|可控硅倍增| 1.1KV五（无线资源管理）|5A我（翻译
|
HIROSE ELECTRIC Co., Ltd.
STMicroelectronics N.V.
L-com, Inc.
NXP Semiconductors N.V.
ITT, Corp.
IDEC, Corp.
Electronic Theatre Controls, Inc.
|
| 18TQ045 18TQ045S 18TQ035S 18TQ 18TQ035 18TQ040 18T |
45V 18A Schottky Discrete Diode in a TO-220AC package
45V 18A Schottky Discrete Diode in a D2-Pak package
40V 18A Schottky Discrete Diode in a D2-Pak package
35V 18A Schottky Discrete Diode in a D2-Pak package
35V 18A Schottky Discrete Diode in a TO-220AC package
SCHOTTKY RECTIFIER
CAT6 SOL PC PVC YEL 2OFT PVC SOLID PATCH CORD
CAT6 SOL PC PVC YEL 30FT PVC SOLID PATCH CORD
DIODE 18 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode
40V 18A Schottky Discrete Diode in a TO-220AC package
|
IRF[International Rectifier]
Vishay Semiconductors
|
| IRFIZ48N IRFIZ48 IRFIZ48NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=36A)
|
IRF[International Rectifier]
|
| IRF5Y540CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.058ohm Id=18A*)
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.058ohm, Id=18A*)
|
IRF[International Rectifier]
|
| FDMC8678S |
N-Channel Power Trench? SyncFET TM 30V, 18A, 5.2mΩ
N-Channel Power Trench㈢ SyncFET TM 30V, 18A, 5.2mヘ
|
Fairchild Semiconductor
|
| FDMC4435BZ |
P-Channel Power Trench? MOSFET -30V, -18A, 20.0mΩ
P-Channel Power Trench㈢ MOSFET -30V, -18A, 20.0mヘ
|
Fairchild Semiconductor
|
| FCP36N60N |
N-Channel SupreMOSMOSFET 600V, 36A, 90m
|
Fairchild Semiconductor
|
| IRLR3714PBF |
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20m, ID = 36A )
|
International Rectifier
|
| STF20NF20 STP20NF20 STD20NF20 |
N-channel 200V - 0.10-18A- DPAK/TO-220/TO-220FP Low gate charge STripFETPower MOSFET N沟道200 0.10 18A条，DPAK/TO-220/TO-220FP低栅极电荷STripFET⑩功率MOSFET
N-channel 200V - 0.10ヘ -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET⑩ Power MOSFET
N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET Power MOSFET
N-channel 200V - 0.10Ω -18A- DPAK/TO-220/TO-220FP Low gate charge STripFET?/a> Power MOSFET
|
STMicroelectronics N.V.
|
