| PART |
Description |
Maker |
| FMMT634-15 FMMT634TA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
100V NPN DARLINGTON TRANSISTOR IN SOT23
|
Diodes Incorporated
|
| 2SC4134 2SC4134S-E 2SC4134S-TL-E 2SC4134T-E 2SC413 |
Bipolar Transistor 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA
|
ON Semiconductor
|
| 2SB1215 2SB1215S-TL-E 2SB1215T-E 2SB1215T-H 2SB121 |
Bipolar Transistor (-)100V, (-)3A, Low VCE(sat) (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| EN3094B EN3094 |
Bipolar Transistor, (-)100V, (-)1A, Low VCE(sat), (PNP)NPN Single NMP
High-Voltage Switching Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| HBDM60V600W HBDM60V600W-7 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
|
| ZXTN25100BFHTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
|
| FMMT591QTA |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
|
| FZT651 FZT651TC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
|
| FZT951QTC FZT951TC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
|
Diodes
|
| EN3096A 2SC4489T-AN |
Bipolar Transistor
Bipolar Transistor High breakdown voltage, large current capacity
|
ON Semiconductor
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
