PART |
Description |
Maker |
STGWT40V60DF STGW40V60DF |
Trench gate field-stop IGBT, V series
|
STMicroelectronics
|
APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp. Microsemi Corporation
|
STGW60H65DF |
60 A, 650 V field stop trench gate IGBT with very fast diode
|
ST Microelectronics STMicroelectronics
|
STGP15M65DF2 |
Trench gate field-stop IGBT M series, 650 V, 15 A low loss
|
STMicroelectronics
|
STGW40H120DF2 |
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
|
ST Microelectronics
|
STGB30V60DF STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
|
ST Microelectronics
|
STGW40V60DLF |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
|
ST Microelectronics
|
STGB15M65DF2 |
Trench gate field-stop IGBT M series, 650 V, 15 A low loss
|
STMicroelectronics
|
APTGT150DH60TG |
Asymmetrical - Bridge Trench Field Stop IGBT Power Module 225 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
FGH50T65UPD |
Field Stop Trench IGBT
|
Fairchild Semiconductor
|
APTGT200DH120G |
Asymmetrical - Bridge Fast Trench Field Stop IGBT Power Module 280 A, 1200 V, N-CHANNEL IGBT
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|