PART |
Description |
Maker |
RJK03P0DPA RJK03P0DPA-00-J5A |
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK0236DPA |
Built in SBD N Channel Power MOS FET
|
Renesas
|
RJK03H1DPA RJK03H1DPA-00-J5A RJK03H1DPA13 |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET
|
Renesas Electronics Corporation
|
RJK0380DPA RJK0380DPA-00-J5A |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N7DPA |
30V, 35A, 4.4m max.Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N1DPA |
30V, 45A, 3.0m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK03N0DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
CPH583507 CPH5835 |
Pch SBD MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
MCH5818 |
Pch SBD MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
MCH5809 |
Nch SBD N-Channel Silicon MOSFET DC / DC Converter Applications
|
Sanyo Semicon Device
|
OM6215SS OM6214SS OM6216SS OM6217SS |
30 A, 100 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 100V Dual N-Channel MOSFET in a S-6 package 400V Dual N-Channel MOSFET in a S-6 package 500V Dual N-Channel MOSFET in a S-6 package 200V Dual N-Channel MOSFET in a S-6 package
|
List of Unclassifed Manufacturers ETC International Rectifier
|
PT2390 PT2390-S |
Echo IC with Built in Michrophone Amplifier and Output Mixer Echo IC with Built-in Microphone Amplifier & Output Mixer 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR3711Z with Lead Free Packaging
|
Princeton Technology Co... Princeton Technology Corporation PTC
|