| PART |
Description |
Maker |
| TGA2583-15 |
2.7 3.7GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
| TGA2237-SM TGA2237-SM-15 |
0.03 2.5GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
| RFHA3832 |
10W GaN Wide-Band Power Amplifier
|
RF Micro Devices
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
| NTE7105 |
Integrated Circuit Dual 10W 10W Stereo Amplifier
|
NTE Electronics
|
| TDA7269SA |
10W 10W STEREO AMPLIFIER WITH MUTE & ST-BY
|
意法半导
|
| TDA7269SA |
10W+10W STEREO AMPLIFIER WITH MUTE & ST-BY
|
STMicroelectronics
|
| 5962-04238 5962-04239 5962-04240 5962-04241 5962-0 |
10W Total Output Power 28 Vin 3.3 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04238
10W Total Output Power 28 Vin 5 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04239
10W Total Output Power 28 Vin 12 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04240
10W Total Output Power 28 Vin 15 Vout Single DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04241
10W Total Output Power 28 Vin /-5 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04242
10W Total Output Power 28 Vin /-12 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04243
10W Total Output Power 28 Vin /-15 Vout Dual DC-DC Radiation Hardened Converter in a S Package. DLA Number 5962-04244
|
International Rectifier
|
| EIA1011-4P |
10.7-11.7GHz 4W Internally Matched Power FET
|
Excelics Semiconductor
|
| EIA1011-4P EIB1011-4P |
10.7-11.7GHz, 4W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1819-2P EIB1819-2P |
18.7-19.7GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
