| PART |
Description |
Maker |
| RLDH808-1200-5 |
main technical parameters
|
Roithner LaserTechnik G...
|
| RLDH980-70-3 |
main technical parameters
|
Roithner LaserTechnik G...
|
| RLDH660-40-3 |
main technical parameters
|
Roithner LaserTechnik G...
|
| SI7136DP-RC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| MR18R1628GEG0 |
Key Timing Parameters
|
Samsung semiconductor
|
| STGP20V60F |
Tight parameters distribution
|
STMicroelectronics
|
| SI2303BDSRC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| SI7415DN-RC |
R-C Thermal Model Parameters
|
Vishay Siliconix
|
| AN1783 |
Determining MCU Oscillator Start-Up Parameters
|
Motorola
|
| MR18R16228DF0 MR16R1622 MR18R1622DF0 MR16R16224DF0 |
(MR1xR1622(4/8/G)DF0) Key Timing Parameters
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| 23C21E-40ML5 |
A wide variety of transmissionline topologies and pcb-parameters like permittivity
|
Rosenberger Hochfrequen...
|
