| PART |
Description |
Maker |
| MMBZ5243B |
Planar Die Construction
|
TY Semiconductor Co., Ltd
|
| BZT52C30 BZT52C9V1 BZT52C5V1 |
1/2 Watt ZEBER DIODES Planar Die Construction
|
First Components International
First Components Intern...
|
| 2KBP10M |
Glass Passivated Die Construction
|
Mospec Semiconductor
|
| MBR850 |
Guard Ring Die Construction for Transient Protection
|
Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
|
| SB20100 |
Guard Ring Die Construction for Transient Protection
|
Sangdest Microelectroni...
|
| TIP112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| ES2X-13-F ES2XA-13-F ES2B-13-F ES2AA |
2.0A SURFACE MOUNT SUPER-FAST RECTIFIER
RECTIFIER FAST-RECOVERY SINGLE 2A 100V 50A-ifsm 0.92V-vf 25ns 5uA-ir SMB 3K/REEL-13 2 A, 100 V, SILICON, RECTIFIER DIODE
Glass Passivated Die Construction
|
Diodes Incorporated
Diodes, Inc.
|
| TLE5009A16 |
Available as single die and dual die with separate supplies for each die
|
Infineon Technologies A...
|
| S3K-13 S3MB |
Glass Passivated Die Construction
3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
|
Diodes Incorporated
|
| ZBS |
Cemented Resistors with Corrugated Ribbon, All welded construction, Power rating up to 500 watt, Corrugated ribbon construction aids rapid cooling, Available in adjustable design
|
Vishay
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
| AM29BL802C_03 AM29BL802C AM29BL802CB80DGE1 AM29BL8 |
Am29BL802C (Known Good Die Supplement)
8 Megabit (512 K x 16-Bit) CMOS 3.0 Volt-only, Burst-mode, Boot Sector Flash Memory-Die Revision 1
|
Advanced Micro Devices
SPANSION[SPANSION]
|
