| PART |
Description |
Maker |
| T1G3000532-SM T1G3000532-SMEVB T1G3000532-SM-15 |
5W, 32V, 0.03 ?3.5 GHz, GaN RF Input-Matched Transistor
|
TriQuint Semiconductor
|
| T1G6001032-SM-15 T1G6001032-SM-EVB1 |
10W, 32V, DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| TGA2611 |
2-6 GHz GaN LNA
|
TriQuint Semiconductor
|
| CGHV1J070D |
70 W, 18.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CG2H80015D |
15 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
| CMPA5585025F CMPA5585025F-AMP CMPA5585025F-TB |
25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| CMPA2735075D |
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
|
Cree, Inc
|
| TGA2576-FL-15 |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
| TGA2576-FL |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
| STK4161V |
AF Power Amplifier (Split Power Supply) (35W 35W min, THD = 0.08%)
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| T2G6003028-FS-EVB1 T2G6003028-FS-15 T2G6003028-FS- |
30W, 28V DC 6 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
| T1G2028536-FSEVB1 T1G2028536-FS-15 |
285W, 36V DC ?2 GHz, GaN RF Power Transistor
|
TriQuint Semiconductor
|
