| PART |
Description |
Maker |
| 1SS370 E000291 |
From old datasheet system
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
DIODE (HIGH VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| BAW56S Q62702-A1253 SIEMENSAG-Q62702-A1253 |
Silicon Switching Diode Array (For high-speed switching applications Common anode) 4 ELEMENT, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IMN10 |
Switching Diode Ultra high speed switching High reliability.
|
Rohm
|
| RM100C1A-XXF RM100CA/C1A-XXF |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
| BAW56U |
General Purpose Diodes - Silicon Switching Diode Array for high-speed switching
|
Infineon
|
| Q62702-A1050 BAS16W |
Silicon Switching Diode (For high speed switching applications) 0.25 A, SILICON, SIGNAL DIODE
From old datasheet system
|
SIEMENS AG
Siemens Semiconductor Group
|
| BAV99W BAV99S BAV99B5003 |
Silicon Switching Diode
For high-speed switching applications
|
Infineon Technologies AG
|
| BAW100 Q62702-A376 |
From old datasheet system
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes)
|
Siemens Group
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| CMOD4448 CENTRALSEMICONDUCTORCORP-CMOD4448 |
ULTRAminiTM HIGH SPEED SWITCHING DIODE 0.25 A, 100 V, SILICON, SIGNAL DIODE
|
Central Semiconductor, Corp.
CENTRAL[Central Semiconductor Corp]
|
| BAS16W |
High Speed Switching Diode 350mW 0.1 A, 75 V, SILICON, SIGNAL DIODE
|
Micro Commercial Components, Corp.
Micro Commercial Components Corp.
|
