| PART |
Description |
Maker |
| BAT19-ARX |
SILICON, UHF BAND, MIXER DIODE, DO-35
|
STMICROELECTRONICS
|
| 1SS154 |
Diode Silicon Epitaxial Schottky Barrier Type UHF~S Band Mixer/Detector Applications
|
TOSHIBA
|
| KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation
MICROSEMI CORP-LOWELL
|
| 1SS154 |
DIODE (UHF~S BAND MIXER/DETECTOR APPLICATIONS)
|
Toshiba Semiconductor
|
| DME2031-225 DMJ2303-221 |
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
SKYWORKS SOLUTIONS INC
|
| DMJ4771-000 DME2029-000 DME2031-000 DME2029-255 DM |
SILICON, HIGH BARRIER SCHOTTKY, KU BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, S BAND, MIXER DIODE
SILICON, MEDIUM BARRIER SCHOTTKY, KU BAND, MIXER DIODE
|
|
| 2SC3862 E000891 |
From old datasheet system
NPN EPITAXIAL PLANAR TYPE (TY TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| BAT14-03 BAT14-03W Q62702-A1103 BAT1403W |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| GC9943-S12-127A GC9943-S12-129A GC9941-TCC-127B GC |
SILICON, HIGH BARRIER SCHOTTKY, C BAND, MIXER DIODE
SILICON, HIGH BARRIER SCHOTTKY, KU-K BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, KU-K BAND, MIXER DIODE
SILICON, LOW BARRIER SCHOTTKY, S BAND, MIXER DIODE
|
MICROSEMI CORP-LOWELL
|
|
