| PART |
Description |
Maker |
| IXKH35N60C5 |
N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge
|
IXYS Corporation
|
| MSQ7434N |
Low rDS(on) provides higher efficiency and
|
Bruckewell Technology L...
|
| AM2308NE |
Low rDS(on) provides higher efficiency
|
TY Semiconductor Co., Ltd
|
| AM2319P |
Low rDS(on) Provides Higher Efficiency
|
TY Semiconductor Co., Ltd
|
| AM2310N |
Low rDS(on) Provides Higher Efficiency
|
TY Semiconductor Co., Ltd
|
| MP5073 |
5.5V, 2A Low RDSON Load Switch With Programmable Current Limit
|
Monolithic Power System...
|
| AM3850C |
Low rDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., Ltd
|
| AM1535CE |
Low rDS(on) provides higher efficiency and extends battery life
|
Analog Power
|
| MMBF2201NT1G |
Low RDS(on) Provides Higher Efficiency and Extends Battery Life
|
TY Semiconductor Co., L...
|
| ADP194ACBZ-R7 ADP194CB-EVALZ |
Logic Controlled, High-Side Power Switch Low RDSON of 80 mΩ at 1.8 V
|
Analog Devices
|
| IPW65R190C6 IPA65R190C6 IPP65R190C6 |
650 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
650V CoolMOS C6 Power Transistor
Extremely low losses due to very low FOM Rdson*Qg and Eoss
|
Infineon Technologies AG
|
